| 1 |
Advanced analytical modeling of double-gate Tunnel-FETs - A performance evaluation
Graef M, Hosenfeld F, Horst F, Farokhnejad A, Hain F, Iniguez B, Kloes A
Solid-State Electronics, 141, 31, 2018 |
| 2 |
A quantum wave based compact modeling approach for the current in ultra-short DG MOSFETs suitable for rapid multi-scale simulations
Hosenfeld F, Horst F, Iniguez B, Lime F, Kloes A
Solid-State Electronics, 137, 70, 2017 |
| 3 |
Analytical temperature dependent model for nanoscale double-gate MOSFETs reproducing advanced transport models
Cheralathan M, Sampedro C, Gamiz F, Iniguez B
Solid-State Electronics, 98, 2, 2014 |
| 4 |
Compact modeling solutions for short-channel SOI Schottky barrier MOSFETs
Schwarz M, Holtij T, Kloes A, Iniguez B
Solid-State Electronics, 82, 86, 2013 |
| 5 |
Threshold voltage, and 2D potential modeling within short-channel junctionless DG MOSFETs in subthreshold region
Holtij T, Schwarz M, Kloes A, Iniguez B
Solid-State Electronics, 90, 107, 2013 |
| 6 |
Fully depleted double-gate MSDRAM cell with additional nonvolatile functionality
Park KH, Bawedin M, Lee JH, Bae YH, Na KI, Lee JH, Cristoloveanu S
Solid-State Electronics, 67(1), 17, 2012 |
| 7 |
Analytical compact modeling framework for the 2D electrostatics in lightly doped double-gate MOSFETs
Schwarz M, Holtij T, Kloes A, Iniguez B
Solid-State Electronics, 69, 72, 2012 |
| 8 |
Double-gate 1T-DRAM cell using nonvolatile memory function for improved performance
Park KH, Cristoloveanu S, Bawedin M, Bae Y, Na KI, Lee JH
Solid-State Electronics, 59(1), 39, 2011 |
| 9 |
Investigation of scalability of In0.7Ga0.3As quantum well field effect transistor (QWFET) architecture for logic applications
Hwang E, Mookerjea S, Hudait MK, Datta S
Solid-State Electronics, 62(1), 82, 2011 |
| 10 |
2D analytical calculation of the electric field in lightly doped Schottky barrier double-gate MOSFETs and estimation of the tunneling/thermionic current
Schwarz M, Holtij T, Kloes A, Iniguez B
Solid-State Electronics, 63(1), 119, 2011 |
