| 1 |
Concentric dopant segregation in CVD-grown N-doped graphene single crystals
Li J, Tay RY, Li H, Jing L, Tsang SH, Bolker A, Saguy C, Teo EHT
Applied Surface Science, 454, 121, 2018 |
| 2 |
Modeling of dopant segregation in sapphire single crystal fibre growth by Micro-Pulling-Down method
Su WJ, Duffar T, Nehari A, Kononets V, Lebbou K
Journal of Crystal Growth, 474, 43, 2017 |
| 3 |
High spatially resolved cation concentration profile at the grain boundaries of Sc-doped BaZrO3
Shirpour M, Gregori G, Houben L, Merkle R, Maier J
Solid State Ionics, 262, 860, 2014 |
| 4 |
2D physics-based closed-form modeling of dopant-segregated Schottky barrier UTB MOSFETs
Schwarz M, Kloes A
Solid-State Electronics, 99, 65, 2014 |
| 5 |
Si tunneling transistors with high on-currents and slopes of 50 mV/dec using segregation doped NiSi2 tunnel junctions
Knoll L, Schmidt M, Zhao QT, Trellenkamp S, Schafer A, Bourdelle KK, Mantl S
Solid-State Electronics, 84, 211, 2013 |
| 6 |
Space charge depletion in grain boundaries of BaZrO3 proton conductors
Shirpour M, Merkle R, Maier J
Solid State Ionics, 225, 304, 2012 |
| 7 |
20 nm Gate length Schottky MOSFETs with ultra-thin NiSi/epitaxial NiSi2 source/drain
Knoll L, Zhao QT, Luptak R, Trellenkamp S, Bourdelle KK, Mantl S
Solid-State Electronics, 71, 88, 2012 |
| 8 |
Computational study of dopant segregated nanoscale Schottky barrier MOSFETs for steep slope, low SD-resistance and high on-current gate-modulated resonant tunneling FETs
Afzalian A, Flandre D
Solid-State Electronics, 65-66, 123, 2011 |
| 9 |
Systematic study of Schottky barrier MOSFETs with dopant segregation on thin-body SOI
Urban C, Sandow C, Zhao QT, Knoch J, Lenk S, Mantl S
Solid-State Electronics, 54(2), 185, 2010 |
| 10 |
Small-signal analysis of high-performance p- and n-type SOI SB-MOSFETs with dopant segregation
Urban C, Emam M, Sandow C, Zhao QT, Fox A, Mantl S, Raskin JP
Solid-State Electronics, 54(9), 877, 2010 |
