검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Gold Nanoparticles on Functionalized Silicon Substrate under Coulomb Blockade Regime: An Experimental and Theoretical Investigation Pluchery O, Caillard L, Dollfus P, Chabal YJ Journal of Physical Chemistry B, 122(2), 897, 2018 |
| 2 |
Monte Carlo analysis of the dynamic behavior of III-V MOSFETs for low-noise RF applications Shi M, Saint-Martin J, Bournel A, Querlioz D, Wichmann N, Bollaert S, Danneville F, Dollfus P Solid-State Electronics, 87, 51, 2013 |
| 3 |
Multiscale simulation of carbon nanotube transistors Maneux C, Fregonese S, Zimmer T, Retailleau S, Nguyen HN, Querlioz D, Bournel A, Dollfus P, Triozon F, Niquet YM, Roche S Solid-State Electronics, 89, 26, 2013 |
| 4 |
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs Palestri P, Alexander C, Asenov A, Aubry-Fortuna V, Baccarani G, Bournel A, Braccioli M, Cheng B, Dollfus P, Esposito A, Esseni D, Fenouillet-Beranger C, Fiegna C, Fiori G, Ghetti A, Iannaccone G, Martinez A, Majkusiak B, Monfray S, Peikert V, Reggiani S, Riddet C, Saint-Martin J, Sangiorgi E, Schenk A, Selmi L, Silvestri L, Toniutti P, Walczak J Solid-State Electronics, 53(12), 1293, 2009 |
| 5 |
Device performance and optimization of decananometer long double gate MOSFET by Monte Carlo simulation Bournel A, Aubry-Fortuna V, Saint-Martin J, Dollfus P Solid-State Electronics, 51(4), 543, 2007 |
| 6 |
Comparison of multiple-gate MOSFET architectures using Monte Carlo simulation Saint-Martin J, Bournel A, Dollfus P Solid-State Electronics, 50(1), 94, 2006 |
| 7 |
Electron effective mobility in strained-Si/Si1-xGex MOS devices using Monte Carlo simulation Aubry-Fortuna V, Dollfus P, Galdin-Retailleau S Solid-State Electronics, 49(8), 1320, 2005 |
| 8 |
Quantum and random impurity effects in ultra-short MOSFET Dollfus P, Barraud S, Cassan E, Monsef F, Galdin S Materials Science Forum, 384-3, 51, 2002 |
| 9 |
Short-range and long-range Coulomb interactions for 3D Monte Carlo device simulation with discrete impurity distribution Barraud S, Dollfus P, Galdin S, Hesto P Solid-State Electronics, 46(7), 1061, 2002 |
| 10 |
Study of Uniform and Graded SiGe Channel Heterojunction P-MOSFETs Using Monte-Carlo Simulation Dollfus P, Galdin S, Arbey ME, Hesto P Thin Solid Films, 294(1-2), 259, 1997 |