화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 MOVPE grown periodic AlN/BAIN heterostructure with high boron content
Li X, Sundaram S, El Gmili Y, Genty F, Bouchoule S, Patriache G, Disseix P, Reveret F, Leymarie J, Salvestrini JP, Dupuis RD, Voss PL, Ougazzaden A
Journal of Crystal Growth, 414, 119, 2015
2 Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm
Li X, Le Gac G, Bouchoule S, El Gmili Y, Patriarche G, Sundaram S, Disseix P, Reveret F, Leymarie J, Streque J, Genty F, Salvestrini JP, Dupuis RD, Li XH, Voss PL, Ougazzaden A
Journal of Crystal Growth, 432, 37, 2015
3 Low dislocation density high-quality thick hydride vapour phase epitaxy (HVPE) GaN layers
Andre Y, Trassoudaine A, Tourret J, Cadoret R, Gil E, Castelluci D, Aoude O, Disseix P
Journal of Crystal Growth, 306(1), 86, 2007
4 The determination of e(14) in (111)B-grown (In,Ga)As/GaAs strained layers
Ballet P, Disseix P, Leymarie J, Vasson A, Vasson AM, Grey R
Thin Solid Films, 336(1-2), 354, 1998