검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
High quality relaxed Ge layers grown directly on a Si(001) substrate Shah VA, Dobbie A, Myronov M, Leadley DR Solid-State Electronics, 62(1), 189, 2011 |
| 2 |
A quantitative model for the interpretation of RAV (rocking curve azimuthal variation) results from heteroepitaxial semiconductor layers Yarlagadda B, Rodriguez A, Li P, Velampati R, Ocampo JF, Ayers JE, Jain FC Journal of Crystal Growth, 312(7), 886, 2010 |
| 3 |
Selective electrochemical profiling of threading defects in mismatched heteroepitaxial systems Nemcsics A, Riesz F, Dobos L Thin Solid Films, 343-344, 520, 1999 |
| 4 |
Lattice curvature of InxGa1-xAs/GaAs [001] graded buffer layers Romanato F, Natali M, Napolitani E, Drigo AV, Bosacchi A, Ferrari C, Franchi S, Salviati G Journal of Vacuum Science & Technology A, 16(6), 3578, 1998 |
| 5 |
Influence of Strain on Semiconductor Thin-Film Epitaxy Fitzgerald EA, Samavedam SB, Xie YH, Giovane LM Journal of Vacuum Science & Technology A, 15(3), 1048, 1997 |
| 6 |
Line, Point and Surface Defect Morphology of Graded, Relaxed Gesi Alloys on Si Substrates Fitzgerald EA, Samavedam SB Thin Solid Films, 294(1-2), 3, 1997 |
| 7 |
Defect-Free Strain Relaxation in Locally MBE-Grown SiGe Heterostructures Rupp T, Kaesen F, Hansch W, Hammerl E, Gravesteijn DJ, Schorer R, Silveira E, Abstreiter G, Eisele I Thin Solid Films, 294(1-2), 27, 1997 |