화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 "Zero-charge" SiO2/Al2O3 stacks for the simultaneous passivation of n(+) and p(+) doped silicon surfaces by atomic layer deposition
van de Loo BWH, Knoops HCM, Dingemans G, Janssen GJM, Lamers MWPE, Romijn IG, Weeber AW, Kessels WMM
Solar Energy Materials and Solar Cells, 143, 450, 2015
2 Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties
Dingemans G, van Helvoirt CAA, Pierreux D, Keuning W, Kessels WMM
Journal of the Electrochemical Society, 159(3), H277, 2012
3 Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
Dingemans G, Terlinden NM, Pierreux D, Profijt HB, van de Sanden MCM, Kessels WMM
Electrochemical and Solid State Letters, 14(1), H1, 2011
4 In-situ transmission measurements as process control for thin-film silicon solar cells
Meier M, Muthmann S, Flikweert AJ, Dingemans G, van de Sanden MCM, Gordijn A
Solar Energy Materials and Solar Cells, 95(12), 3328, 2011
5 Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
Dingemans G, van de Sanden MCM, Kessels WMM
Electrochemical and Solid State Letters, 13(3), H76, 2010
6 Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
Potts SE, Keuning W, Langereis E, Dingemans G, van de Sanden MCM, Kessels WMM
Journal of the Electrochemical Society, 157(7), P66, 2010