화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 GaN/AlGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates
LaRoche JR, Luo B, Ren F, Baik KH, Stodilka D, Gila B, Abernathy CR, Pearton SJ, Usikov A, Tsvetkov D, Soukhoveev V, Gainer G, Rechnikov A, Dimitriev V, Chen GT, Pan CC, Chyi JI
Solid-State Electronics, 48(1), 193, 2004
2 Growth of SiC epitaxial layers on porous surfaces of varying porosity
Saddow SE, Mynbaeva M, Smith MCD, Smirnov AN, Dimitriev V
Applied Surface Science, 184(1-4), 72, 2001