검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
The influence of V/III ratio on GaN grown on patterned sapphire substrate with low temperature AlN buffer layer by hydride vapor phase epitaxy Liu NL, Wang Q, Zheng XP, Li SF, Dikme Y, Xiong H, Pang YZ, Zhang GY Journal of Crystal Growth, 500, 85, 2018 |
| 2 |
Growth and characterization of m-plane GaN-based layers on LiAlO2 (100) grown by MOVPE Hang DR, Chou MMC, Chang L, Dikme Y, Heuken M Journal of Crystal Growth, 311(3), 452, 2009 |
| 3 |
Growth and investigation of m-plane (In)GaN buffer layers on LiAlO2 substrates Mauder C, Khoshroo LR, Behmenburg H, Wen TC, Dikme Y, Rzheutskii MV, Yablonskii GP, Woitok J, Chou MMC, Heuken M, Kalisch H, Jansen RH Journal of Crystal Growth, 310(23), 4976, 2008 |
| 4 |
MOVPE, processing and characterization of AlGaN/GaN HEMTs with different Al concentrations on silicon substrates Fieger M, Eickelkamp M, Koshroo LR, Dikme Y, Noculak A, Kalisch H, Heuken M, Jansen RH, Vescan A Journal of Crystal Growth, 298, 843, 2007 |
| 5 |
Characterization of GaN grown on patterned Si(111) substrates Wang D, Dikme Y, Jia S, Chen KJ, Lau KM, van Gemmern P, Lin YC, Kalisch H, Jansen RH, Heuken M Journal of Crystal Growth, 272(1-4), 489, 2004 |
| 6 |
Growth and characterization of GaN-based structures on SiCOI-engineered substrates Dikme Y, van Gemmern P, Lin YC, Szymakowski A, Kalisch H, Faure B, Richtarch C, Larheche H, Bove P, Letertre F, Woitok JF, Efthimiadis K, Jansen RH, Heuken M Journal of Crystal Growth, 272(1-4), 500, 2004 |
| 7 |
Investigation of buffer growth temperatures for MOVPE of GaN on Si(111) Dikme Y, Gerstenbrandt G, Alam A, Kalisch H, Szymakowski A, Fieger M, Jansen RH, Heuken M Journal of Crystal Growth, 248, 578, 2003 |