검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Tetrasilane and digermane for the ultra-high vacuum chemical vapor deposition of SiGe alloys Hart J, Hazbun R, Eldridge D, Hickey R, Fernando N, Adam T, Zollner S, Kolodzey J Thin Solid Films, 604, 23, 2016 |
| 2 |
Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition Gencarelli F, Shimura Y, Kumar A, Vincent B, Moussa A, Vanhaeren D, Richard O, Bender H, Vandervorst W, Caymax M, Loo R, Heyns M Thin Solid Films, 590, 163, 2015 |
| 3 |
Low-temperature Ge and GeSn Chemical Vapor Deposition using Ge2H6 Gencarelli F, Vincent B, Souriau L, Richard O, Vandervorst W, Loo R, Caymax M, Heyns M Thin Solid Films, 520(8), 3211, 2012 |
| 4 |
Evidence for a retro-Diels-Alder reaction on a single crystalline surface : Butadienes on Ge(100) Teplyakov AV, Lal P, Noah YA, Bent SF Journal of the American Chemical Society, 120(29), 7377, 1998 |
| 5 |
The prototype Ge-H insertion reaction of germylene with germane. Absolute rate constants, temperature dependence, RRKM modeling and the potential energy surface Becerra R, Boganov SE, Egorov MP, Faustov VI, Nefedov OM, Walsh R Journal of the American Chemical Society, 120(48), 12657, 1998 |