| 1 |
Analytical insights on ion behaviour at interfaces
Ionescu D, Ionescu RA
Journal of Electroanalytical Chemistry, 650(2), 205, 2011 |
| 2 |
Suppression of Ge-O and Ge-N bonding at Ge-HfO(2) and Ge-TiO(2) interfaces by deposition onto plasma-nitrided passivated Ge substrates
Lee S, Long JP, Lucovsky G, Luning J
Thin Solid Films, 517(1), 155, 2008 |
| 3 |
Defects and defect relaxation at internal interfaces between high-k transition metal and rare earth dielectrics and interfacial native oxides in metal oxide semiconductor (MOS) structures
Lucovsky G, Phillips JC
Thin Solid Films, 486(1-2), 200, 2005 |
| 4 |
Reductions in interface defects, D-it, by post-oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices
Bae C, Lucovsky G
Applied Surface Science, 234(1-4), 475, 2004 |
| 5 |
Device-quality GaN-dielectric interfaces by 300 degrees C remote plasma processing
Bae C, Rayner GB, Lucovsky G
Applied Surface Science, 216(1-4), 119, 2003 |
| 6 |
Charge redistribution at GaN-Ga2O3 interfaces: a microscopic mechanism for low defect density interfaces in remote-plasma-processed MOS devices prepared on polar GaN faces
Therrien R, Lucovsky G, Davis R
Applied Surface Science, 166(1-4), 513, 2000 |
| 7 |
Plasma processed ultra-thin SiO2 interfaces far advanced silicon NMOS and PMOS devices: applications to Si-oxide Si oxynitride, Si-oxide Si nitride and Si-oxide transition metal oxide stacked gate dielectrics
Lucovsky G, Yang HY, Wu Y, Niimi H
Thin Solid Films, 374(2), 217, 2000 |
