검색결과 : 23건
| No. | Article |
|---|---|
| 1 |
Mechanisms of copper direct bonding observed by in-situ and quantitative transmission electron microscopy Martinez M, Legros M, Signamarcheix T, Bally L, Verrun S, Di Cioccio L, Deguet C Thin Solid Films, 530, 96, 2013 |
| 2 |
An Overview of Patterned Metal/Dielectric Surface Bonding: Mechanism, Alignment and Characterization Di Cioccio L, Gueguen P, Taibi R, Landru D, Gaudin G, Chappaz C, Rieutord F, de Crecy F, Radu I, Chapelon LL, Clavelier L Journal of the Electrochemical Society, 158(6), P81, 2011 |
| 3 |
Copper Direct-Bonding Characterization and Its Interests for 3D Integration Gueguen P, Di Cioccio L, Gergaud P, Rivoire M, Scevola D, Zussy M, Charvet AM, Bally L, Lafond D, Clavelier L Journal of the Electrochemical Society, 156(10), H772, 2009 |
| 4 |
Feasibility of III-V on-silicon strain relaxed substrates Kostrzewa M, Grenet G, Regreny P, Leclercq JL, Perreau P, Jalaguier E, Di Cioccio L, Hollinger G Journal of Crystal Growth, 275(1-2), 157, 2005 |
| 5 |
Progress and limits of the numerical simulation of SiC bulk and epitaxy growth processes Pons M, Blanquet E, Dedulle JM, Ucar M, Wellmann P, Danielsson O, Ferret P, Di Cioccio L, Baillet F, Chaussende D, Madar R Materials Science Forum, 483, 3, 2005 |
| 6 |
Metal bonding in SiC based substrates Matko I, Chenevier B, Madar R, Roussel H, Coindeau S, Letertre F, Richtarch C, Di Cioccio L Materials Science Forum, 483, 781, 2005 |
| 7 |
Modeling and simulation of SiC CVD in the horizontal hot-wall reactor concept Meziere J, Ucar M, Blanquet E, Pons M, Ferret P, Di Cioccio L Journal of Crystal Growth, 267(3-4), 436, 2004 |
| 8 |
Nitrogen doping of epitaxial SiC: Experimental evidence of the re-incorporation of etched nitrogen during growth Meziere J, Ferret P, Blanquet E, Pons M, Di Cioccio L, Billon T Materials Science Forum, 457-460, 731, 2004 |
| 9 |
QuaSiC Smart-Cut (R) substrates for SiC high power devices Letertre F, Jalaguier E, Di Cioccio L, Templier F, Bluet JM, Banc C, Matko I, Chenevier B, Bano E, Guillot G, Billon T, Aspar B, Madar R, Ghyselen B Materials Science Forum, 389-3, 151, 2002 |
| 10 |
Simulation of the large-area growth of homoepitaxial 4H-SiC by chemical vapor deposition Pons M, Meziere J, Kuan SWT, Blanquet E, Ferret P, Di Cioccio L, Billon T, Madar R Materials Science Forum, 389-3, 223, 2002 |