화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 As-P interface-sensitive GaInP/GaAs structures grown in a production MBE system
Dhellemmes S, Godey S, Wilk A, Wallart X, Mollot F
Journal of Crystal Growth, 278(1-4), 564, 2005
2 CBr4 and Be heavily doped InGaAs grown in a production MBE system
Godey S, Dhellemmes S, Wilk A, Zaknoune M, Mollot F
Journal of Crystal Growth, 278(1-4), 600, 2005
3 Growth of Be-doped GaInP/GaAs heterostructure bipolar transistor by all solid-source multiwafer production molecular beam epitaxy
Wilk A, Zaknoune M, Godey S, Dhellemmes S, Gerard P, Chaix C, Mollot F
Journal of Vacuum Science & Technology B, 22(3), 1444, 2004