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| No. | Article |
|---|---|
| 1 |
Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study Mandl B, Dey AW, Stangl J, Cantoro M, Wernersson LE, Bauer G, Samuelson L, Deppert K, Thelander C Journal of Crystal Growth, 334(1), 51, 2011 |