화학공학소재연구정보센터
검색결과 : 11건
No. Article
1 An active perceivable device-oriented modeling framework for hydropower plant simulation
Zhang BQ, Yuan XH, Yuan YB, Wang X
Energy, 165, 1009, 2018
2 Si, GaAs, and InP as cathode materials for photon-enhanced thermionic emission solar cells
Varpula A, Tappura K, Prunnila M
Solar Energy Materials and Solar Cells, 134, 351, 2015
3 Evaluating the CDM-Robustness of the input buffer with very fast transmission line pulse
Kao TC, Lee JH, Hung CY, Lien CH, Su HD
Solid-State Electronics, 104, 12, 2015
4 Mobility-and temperature-dependent device model for amorphous In-Ga-Zn-O thin-film transistors
Abe K, Sato A, Takahashi K, Kumomi H, Kamiya T, Hosono H
Thin Solid Films, 559, 40, 2014
5 An improved model for InP/InGaAs double heterojunction bipolar transistors
Shi YX, Jin Z, Su YB, Cao YX, Wang Y
Solid-State Electronics, 81, 163, 2013
6 Extending ballistic graphene FET lumped element models to diffusive devices
Vincenzi G, Deligeorgis G, Coccetti F, Dragoman M, Pierantoni L, Mencarelli D, Plana R
Solid-State Electronics, 76, 8, 2012
7 Recombination kinetics and stability in polycrystalline Cu(In,Ga)Se-2 solar cells
Metzger WK, Repins IL, Romero M, Dippo P, Contreras M, Noufi R, Levi D
Thin Solid Films, 517(7), 2360, 2009
8 Performance analysis of the vapour compression cycle using ejector as an expander
Nehdi E, Kairouani L, Bouzaina M
International Journal of Energy Research, 31(4), 364, 2007
9 Modeling the floating-body effects of fully depleted, partially depleted, and body-grounded SOI MOSFETs
Chan M, Su P, Wan H, Lin CH, Fung SKH, Niknejad AM, Hu CM, Ko PK
Solid-State Electronics, 48(6), 969, 2004
10 Compact models for silicon carbide power devices
McNutt T, Hefner A, Mantooth A, Berning D, Singh R
Solid-State Electronics, 48(10-11), 1757, 2004