검색결과 : 11건
No. | Article |
---|---|
1 |
An active perceivable device-oriented modeling framework for hydropower plant simulation Zhang BQ, Yuan XH, Yuan YB, Wang X Energy, 165, 1009, 2018 |
2 |
Si, GaAs, and InP as cathode materials for photon-enhanced thermionic emission solar cells Varpula A, Tappura K, Prunnila M Solar Energy Materials and Solar Cells, 134, 351, 2015 |
3 |
Evaluating the CDM-Robustness of the input buffer with very fast transmission line pulse Kao TC, Lee JH, Hung CY, Lien CH, Su HD Solid-State Electronics, 104, 12, 2015 |
4 |
Mobility-and temperature-dependent device model for amorphous In-Ga-Zn-O thin-film transistors Abe K, Sato A, Takahashi K, Kumomi H, Kamiya T, Hosono H Thin Solid Films, 559, 40, 2014 |
5 |
An improved model for InP/InGaAs double heterojunction bipolar transistors Shi YX, Jin Z, Su YB, Cao YX, Wang Y Solid-State Electronics, 81, 163, 2013 |
6 |
Extending ballistic graphene FET lumped element models to diffusive devices Vincenzi G, Deligeorgis G, Coccetti F, Dragoman M, Pierantoni L, Mencarelli D, Plana R Solid-State Electronics, 76, 8, 2012 |
7 |
Recombination kinetics and stability in polycrystalline Cu(In,Ga)Se-2 solar cells Metzger WK, Repins IL, Romero M, Dippo P, Contreras M, Noufi R, Levi D Thin Solid Films, 517(7), 2360, 2009 |
8 |
Performance analysis of the vapour compression cycle using ejector as an expander Nehdi E, Kairouani L, Bouzaina M International Journal of Energy Research, 31(4), 364, 2007 |
9 |
Modeling the floating-body effects of fully depleted, partially depleted, and body-grounded SOI MOSFETs Chan M, Su P, Wan H, Lin CH, Fung SKH, Niknejad AM, Hu CM, Ko PK Solid-State Electronics, 48(6), 969, 2004 |
10 |
Compact models for silicon carbide power devices McNutt T, Hefner A, Mantooth A, Berning D, Singh R Solid-State Electronics, 48(10-11), 1757, 2004 |