| 1 |
Effects of structure and oxygen flow rate on the photo-response of amorphous IGZO-based photodetector devices
Jang JT, Ko D, Choi S, Kang H, Kim JY, Yu HR, Ahn G, Jung H, Rhee J, Lee H, Choi SJ, Kim DM, Kim DH
Solid-State Electronics, 140, 115, 2018 |
| 2 |
A physics-based scheme for potentials of a-Si: H TFT with symmetric dual gate considering deep Gaussian DOS distribution
Qin J, Yao RH
Solid-State Electronics, 95, 46, 2014 |
| 3 |
First principles calculations of oxygen vacancy formation and migration in mixed conducting Ba0.5Sr0.5Co1-yFeyO3-delta perovskites
Kotomin EA, Mastrikov YA, Kuklja MM, Merkle R, Roytburd A, Maier J
Solid State Ionics, 188(1), 1, 2011 |
| 4 |
Study the effect of distribution of density of states on the depletion width of organic Schottky contacts
Takshi A, Mohammadi M, Madden JD
Solid-State Electronics, 52(11), 1717, 2008 |
| 5 |
Room-temperature magnetism in chemically oxygenated conducting oxide Sr2FeCoO6
Nomura K, Rykov AI, Nemudry AP, Mitsui T
Thin Solid Films, 515(24), 8645, 2007 |
| 6 |
Channel doping effects in poly-Si thin film transistors
Valletta A, Mariucci L, Bonfiglietti A, Fortunato G, Brotherton SD
Thin Solid Films, 487(1-2), 242, 2005 |
