검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Investigation of boron incorporation in delta doped diamond layers by secondary ion mass spectrometry Lobaev MA, Gorbachev AM, Vikharev AL, Isaev VA, Radishev DB, Bogdanov SA, Drozdov MN, Yunin PA, Butler JE Thin Solid Films, 653, 215, 2018 |
| 2 |
Correlation of depth resolution and preferential sputtering in depth profiles of thin layers by Secondary Ion Mass Spectrometry (SIMS) Hofmann S, Lian SY, Han YS, Deng QR, Wang JY Thin Solid Films, 662, 165, 2018 |
| 3 |
Front and back side SIMS analysis of boron-doped delta-layer in diamond Pinault-Thaury MA, Jomard F, Mer-Calfati C, Tranchant N, Pomorski M, Bergonzo P, Arnault JC Applied Surface Science, 410, 464, 2017 |
| 4 |
C and Si delta doping in Ge by CH3SiH3 using reduced pressure chemical vapor deposition Yamamoto Y, Ueno N, Sakuraba M, Murota J, Mai A, Tillack B Thin Solid Films, 602, 24, 2016 |
| 5 |
Well-ordered arranging of Ag nanoparticles in SiO2/Si by ion implantation Takahiro K, Minakuchi Y, Kawaguchi K, Isshiki T, Nishio K, Sasase M, Yamamoto S, Nishiyama F Applied Surface Science, 258(19), 7322, 2012 |
| 6 |
Low energy RBS and SIMS analysis of the SiGe quantum well Krecar D, Rosner M, Draxler M, Bauer P, Hutter H Applied Surface Science, 252(1), 123, 2005 |
| 7 |
Evaluation of BN-delta-doped multilayer reference materials for shallow depth profiling in SIMS: round-robin test Toujou F, Yoshikawa S, Homma Y, Takano A, Takenaka H, Tomita M, Li Z, Hasegawa T, Sasakawa K, Schuhmacher M, Merkulov A, Kim HK, Moon DW, Hong T, Won JY Applied Surface Science, 231-2, 649, 2004 |
| 8 |
Multiple As delta layered Si thin films for SIMS quantification and depth scale calibration Cho SB, Shon HK, Kang HJ, Hong TE, Kim HK, Lee HI, Kim KJ, Moon DW Applied Surface Science, 203, 302, 2003 |