검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
The defect-centric perspective of device and circuit reliability-From gate oxide defects to circuits Kaczer B, Franco J, Weckx P, Roussel PJ, Simicic M, Putcha V, Bury E, Cho M, Degraeve R, Linten D, Groeseneken G, Debacker P, Parvais B, Raghavan P, Catthoor F, Rzepa G, Waltl M, Goes W, Grasser T Solid-State Electronics, 125, 52, 2016 |
| 2 |
Stack optimization of oxide-based RRAM for fast write speed (< 1 mu s) at low operating current (< 10 mu A) Chen CY, Goux L, Fantini A, Degraeve R, Redolfi A, Groeseneken G, Jurczak M Solid-State Electronics, 125, 198, 2016 |
| 3 |
Study of nitrogen impact on V-FB-EOT roll-off by varying interfacial SiO2 thickness Cho M, Akheyar A, Aoulaiche M, Degraeve R, Ragnarsson LA, Tseng J, Hoffmann TY, Groeseneken G Solid-State Electronics, 62(1), 67, 2011 |
| 4 |
Advanced PBTI reliability with 0.69 nm EOT GdHfO gate dielectric Cho M, Aoulaiche M, Degraeve R, Kaczer B, Kauerauf T, Ragnarsson LA, Adelmann C, Van Elshocht S, Hoffmann TY, Groeseneken G Solid-State Electronics, 63(1), 5, 2011 |
| 5 |
Evaluations of intrinsic time dependent dielectric breakdown of dielectric copper diffusion barriers Zhao L, Lofrano M, Croes K, Van Besien E, Tokei Z, Wilson CJ, Degraeve R, Kauerauf T, Beyer GP, Claeys C Thin Solid Films, 520(1), 662, 2011 |
| 6 |
A consistent model for oxide trap profiling with the Trap Spectroscopy by Charge Injection and Sensing (TSCIS) technique Cho M, Degraeve R, Roussel P, Govoreanu B, Kaczer B, Zahid MB, Simoen E, Arreghini A, Jurczak M, Van Houdt J, Groeseneken G Solid-State Electronics, 54(11), 1384, 2010 |
| 7 |
Scaling CMOS: Finding the gate stack with the lowest leakage current Kauerauf T, Govoreanu B, Degraeve R, Groeseneken G, Maes H Solid-State Electronics, 49(5), 695, 2005 |
| 8 |
Characterization of moving bits (MBs) and QBD in wet/dry tunnel oxides for floating gate type nonvolatile memory (FG-NVM) applications Ackaert J, Lowe A, Boonen S, Yao T, Rayhem J, Desoete B, Prasad J, Thomason M, Van Houdt J, Degraeve R, Haspeslagh L, Hendrickx P Solid-State Electronics, 48(10-11), 1911, 2004 |
| 9 |
Electrical properties of Al2O3/ZrO2/Al2O3 gate stack in p-substrate metal oxide semiconductor devices Xu Z, Kaczer B, Degraeve R, De Gendt S, Heyns M, Groeseneken G Journal of the Electrochemical Society, 150(5), G307, 2003 |
| 10 |
Relation between hole traps and hydrogenous species in silicon dioxides Zhang JF, Zhao CZ, Sii HK, Groeseneken G, Degraeve R, Ellis JN, Beech CD Solid-State Electronics, 46(11), 1839, 2002 |