화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Development of a RF large signal MOSFET model, based on an equivalent circuit, and comparison with the BSIM3v3 compact model
Vandamme EP, Schreurs D, van Dinther C, Badenes G, Deferm L
Solid-State Electronics, 46(3), 353, 2002
2 A new dummy-free shallow trench isolation concept for mixed-signal applications
Badenes G, Rooyackers R, Augendre E, Vandamme E, Perello C, Heylen N, Grillaert J, Deferm L
Journal of the Electrochemical Society, 147(10), 3827, 2000
3 Impact of processing parameters on leakage current and defect behavior of n(+)p silicon junction diodes
Gramenova E, Jansen P, Simoen E, Vanhellemont J, Dupas L, Deferm L
Journal of the Electrochemical Society, 146(1), 359, 1999
4 Optimization of polysilicon encapsulated local oxidation of silicon - Cavity dimension effects on mechanical stress and gate oxide integrity
Badenes G, Rooyackers R, Jones SK, Bazley D, Beanland R, De Wolf I, Deferm L
Journal of the Electrochemical Society, 145(5), 1653, 1998
5 Importance of Determining the Polysilicon Dopant Profile During Process-Development
Debusschere I, Deferm L, Vandervorst W
Journal of Vacuum Science & Technology B, 14(1), 265, 1996