화학공학소재연구정보센터
검색결과 : 17건
No. Article
1 Broadening of vibrational levels in X-ray absorption spectroscopy of molecular nitrogen in compound semiconductors
Petravic M, Gao Q, Llewellyn D, Deenapanray PNK, Macdonald D, Crotti C
Chemical Physics Letters, 425(4-6), 262, 2006
2 Direct observation of defect levels in InN by soft x-ray absorption spectroscopy
Petravic M, Deenapanray PNK, Fraser MD, Soldatov AV, Yang YW, Anderson PA, Durbin SM
Journal of Physical Chemistry B, 110(7), 2984, 2006
3 Hydrogen reintroduction by forming gas annealing to LPCVD silicon nitride coated structures
Jin H, Weber KJ, Deenapanray PNK, Blakers AW
Journal of the Electrochemical Society, 153(8), G750, 2006
4 Investigation of reactive ion etching of dielectrics and Si in CHF3/O-2 or CHF3/Ar for photovoltaic applications
Gatzert C, Blakers AW, Deenapanray PNK, Macdonald D, Auret FD
Journal of Vacuum Science & Technology A, 24(5), 1857, 2006
5 Modeling of static concentrator modules incorporating lambertian or v-groove rear reflectors
Weber KJ, Everett V, Deenapanray PNK, Franklin E, Blakers AW
Solar Energy Materials and Solar Cells, 90(12), 1741, 2006
6 Minority carrier lifetime properties of reactive ion etched p-type float zone Si
Deenapanray PNK, Horteis M, Macdonald D, Weber KJ
Electrochemical and Solid State Letters, 8(3), G78, 2005
7 Electrical characterization of impurity-free disordered p-type GaAs
Deenapanray PNK, Coleman VA, Jagadish C
Electrochemical and Solid State Letters, 6(3), G37, 2003
8 Defective crystal recovered from the crystallization of potassium-doped amorphous silicon films
Liu ACY, McCallum JC, Deenapanray PNK
Journal of the Electrochemical Society, 150(4), G266, 2003
9 Towards a better understanding of the operative mechanisms underlying impurity-free disordering of GaAs: Effect of stress
Doshi S, Deenapanray PNK, Tan HH, Jagadish C
Journal of Vacuum Science & Technology B, 21(1), 198, 2003
10 On the pulsed anodic oxidation of n(+)-InP
Deenapanray PNK, Martin A, Lever P, Jagadish C
Electrochemical and Solid State Letters, 5(6), G41, 2002