화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates
Storm DF, Deen DA, Katzer DS, Meyer DJ, Binari SC, Gougousi T, Paskova T, Preble EA, Evans KR, Smith DJ
Journal of Crystal Growth, 380, 14, 2013
2 Dependence of ohmic contact resistance on barrier thickness of AlN/GaN HEMT structures
Deen DA, Storm DF, Katzer DS, Meyer DJ, Binari SC
Solid-State Electronics, 54(6), 613, 2010
3 Self-aligned ALD AlOx T-gate insulator for gate leakage current suppression in SiNx-passivated AlGaN/GaN HEMTs
Meyer DJ, Bass R, Katzer DS, Deen DA, Binari SC, Daniels KM, Eddy CR
Solid-State Electronics, 54(10), 1098, 2010
4 Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures
Storm DF, Katzer DS, Deen DA, Bass R, Meyer DJ, Roussos JA, Binari SC, Paskova T, Preble EA, Evans KR
Solid-State Electronics, 54(11), 1470, 2010