화학공학소재연구정보센터
검색결과 : 8건
No. Article
1 Coupled heat transfer and fluid dynamics modeling of high-temperature SiC solution growth
Mercier F, Dedulle JM, Chaussende D, Pons M
Journal of Crystal Growth, 312(2), 155, 2010
2 Progress and limits of the numerical simulation of SiC bulk and epitaxy growth processes
Pons M, Blanquet E, Dedulle JM, Ucar M, Wellmann P, Danielsson O, Ferret P, Di Cioccio L, Baillet F, Chaussende D, Madar R
Materials Science Forum, 483, 3, 2005
3 Modified physical vapor transport growth of SiC - Control of gas phase composition for improved process conditions
Wellmann PJ, Straubinger TL, Desperrier P, Muller R, Kunecke U, Sakwe SA, Schmitt H, Winnacker A, Blanquet E, Dedulle JM, Pons M
Materials Science Forum, 483, 25, 2005
4 Free growth of 4H-SiC by sublimation method
Dedulle JM, Anikin M, Pons M, Blanquet E, Pisch A, Madar R, Bernard C
Materials Science Forum, 457-460, 71, 2004
5 Experiment and modeling of the large-area etching and growth rate of epitaxial SiC
Meziere J, Pons M, Dedulle JM, Blanquet E, Ferret P, Di Cioccio L, Billon T
Materials Science Forum, 433-4, 141, 2002
6 Coupled thermodynamic - Mass transfer modeling of the SiC boule growth by the PVT method
Pisch A, Blanquet E, Pons M, Bernard C, Dedulle JM, Madar R
Materials Science Forum, 353-356, 61, 2001
7 Numerical simulation of SiC boule growth by sublimation
Madar R, Pons M, Dedulle JM, Blanquet E, Pisch A, Grosse P, Faure C, Anikin M, Bernard C
Materials Science Forum, 338-3, 25, 2000
8 Thermodynamic Heat-Transfer and Mass-Transport Modeling of the Sublimation Growth of Silicon-Carbide Crystals
Pons M, Blanquet E, Dedulle JM, Garcon I, Madar R, Bernard C
Journal of the Electrochemical Society, 143(11), 3727, 1996