검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Development of III-Sb metamorphic DBR membranes on InP for vertical cavity laser applications Addamane SJ, Mansoori A, Renteria EJ, Dawson N, Shima DM, Rotter TJ, Hains CP, Dawson LR, Balakrishnan G Journal of Crystal Growth, 439, 104, 2016 |
| 2 |
Optimization of InAs/GaSb type-II superlattice interfaces for long-wave (similar to 8 mu m) infrared detection Khoshakhlagh A, Plis E, Myers S, Sharma YD, Dawson LR, Krishna S Journal of Crystal Growth, 311(7), 1901, 2009 |
| 3 |
nBn detectors based on InAs/GaSb type-II strain layer superlattice Bishop G, Plis E, Rodriguez JB, Sharma YD, Kim HS, Dawson LR, Krishna S Journal of Vacuum Science & Technology B, 26(3), 1145, 2008 |
| 4 |
Atomistic modeling of strain distribution in self-assembled interfacial misfit dislocation (IMF) arrays in highly mismatched III-V semiconductor materials Jallipalli A, Balakrishnan G, Huang SH, Khoshakhlagh A, Dawson LR, Huffaker DL Journal of Crystal Growth, 303(2), 449, 2007 |
| 5 |
High quality AlSb bulk material on Si substrates using a monolithic self-assembled quantum dot nucleation layer Balakrishnan G, Huang S, Khoshakhlagh A, Dawson LR, Xin YC, Conlin P, Huffaker DL Journal of Vacuum Science & Technology B, 23(3), 1010, 2005 |
| 6 |
Analysis of atomic structure in InAs quantum dashes grown on AlGaAsSb metamorphic buffers Balakrishnan G, Huang SH, Dawson LR, Huffaker DL Journal of Vacuum Science & Technology B, 22(3), 1529, 2004 |
| 7 |
Dynamical faceting and nanoscale lateral growth of GaAs by molecular beam epitaxy Lee SC, Dawson LR, Brueck SRJ Journal of Crystal Growth, 240(3-4), 333, 2002 |
| 8 |
Molecular-Beam Epitaxy-Grown Alassb/Gaassb Distributed-Bragg-Reflector on InP Substrate Operating Near 1.55-Mu-M Blum O, Fritz IJ, Dawson LR, Howard AJ, Headley TJ, Olsen JA, Klem JF, Drummond TJ Journal of Vacuum Science & Technology B, 12(2), 1122, 1994 |