검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Anisotropic and temperature-dependent thermal conductivity of PbI2 Croll A, Tonn J, Post E, Bottner H, Danilewsky AN Journal of Crystal Growth, 466, 16, 2017 |
| 2 |
Evolution of impurity incorporation during ammonothermal growth of GaN Sintonen S, Wahl S, Richter S, Meyer S, Suihkonen S, Schulz T, Irmscher K, Danilewsky AN, Tuomi TO, Stankiewicz R, Albrecht M Journal of Crystal Growth, 456, 51, 2016 |
| 3 |
Synchrotron X-ray diffraction topography study of bonding-induced strain in silicon-on-insulator wafers Lankinen A, Tuomi TO, Kostamo P, Jussila H, Sintonen S, Lipsanen H, Tilli M, Makinen J, Danilewsky AN Thin Solid Films, 603, 435, 2016 |
| 4 |
Removal of oxidic impurities for the growth of high purity lead iodide single crystals Tonn J, Matuchova M, Danilewsky AN, Croll A Journal of Crystal Growth, 416, 82, 2015 |
| 5 |
Threading dislocations in n- and p-type 4H-SiC material analyzed by etching and synchrotron X-ray topography Kallinger B, Polster S, Berwian P, Friedrich J, Muller G, Danilewsky AN, Wehrhahn A, Weber AD Journal of Crystal Growth, 314(1), 21, 2011 |
| 6 |
Czochralski growth of lead iodide single crystals: Investigations and comparison with the Bridgman method Tonn J, Danilewsky AN, Croll A, Matuchova M, Maixner J Journal of Crystal Growth, 318(1), 558, 2011 |
| 7 |
Dislocation dynamics and slip band formation in silicon: In-situ study by X-ray diffraction imaging Danilewsky AN, Wittge J, Croell A, Allen D, McNally P, Vagovic P, Rolo TD, Li Z, Baumbach T, Gorostegui-Colinas E, Garagorri J, Elizalde MR, Fossati MC, Bowen DK, Tanner BK Journal of Crystal Growth, 318(1), 1157, 2011 |
| 8 |
Influence of doping and non-stoichiometry on the quality of lead iodide for use in X-ray detection Matuchova M, Zdansky K, Zavadil J, Tonn J, Jafar MMAG, Danilewsky AN, Croll A, Maixner J Journal of Crystal Growth, 312(8), 1233, 2010 |
| 9 |
Dislocation analysis for heat-exchanger method grown sapphire with white beam synchrotron X-ray topography Chen WM, McNally PJ, Shvyd'ko YV, Tuomi T, Danilewsky AN, Lerche M Journal of Crystal Growth, 252(1-3), 113, 2003 |
| 10 |
Determination of crystal misorientation in epitaxial lateral overgrowth of GaN Chen WM, McNally PJ, Jacobs K, Tuomi T, Danilewsky AN, Zytkiewicz ZR, Lowney D, Kanatharana J, Knuuttila L, Riikonen J Journal of Crystal Growth, 243(1), 94, 2002 |