검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drains Hartmann JM, Benevent V, Barnes JP, Veillerot M, Lafond D, Damlencourt JF, Morvan S, Previtali B, Andrieu F, Loubet N, Dutartre D Solid-State Electronics, 83, 10, 2013 |
| 2 |
Electrical Transport at Room and Low Temperature in 3D Vertically Stacked SiGe and SiGeC Nanowires Diab A, Saracco E, Ionica I, Bonafos C, Damlencourt JF, Lee JH, Cristoloveanu S Journal of the Electrochemical Society, 159(4), H467, 2012 |
| 3 |
Improved 1/f noise characterization of strained SiGe on insulator MOSFETs fabricated on wafers obtained by the Ge enrichment technique Valenza M, Husseini JE, Martinez F, Bawedin M, Le Royer C, Damlencourt JF Solid-State Electronics, 70, 27, 2012 |
| 4 |
A benchmarking of silane, disilane and dichlorosilane for the low temperature growth of group IV layers Hartmann JM, Benevent V, Damlencourt JF, Billon T Thin Solid Films, 520(8), 3185, 2012 |
| 5 |
Accurate depth profiling of dry oxidized SiGeC thin films by extended Full Spectrum ToF-SIMS Py M, Saracco E, Damlencourt JF, Barnes JP, Fabbri JM, Hartmann JM Applied Surface Science, 257(22), 9414, 2011 |
| 6 |
High mobility CMOS: First demonstration of planar GeOI p-FETs with SOI n-FETs Le Royer C, Damlencourt JF, Vincent B, Romanjek K, Le Cunff Y, Grampeix H, Mazzocchi V, Carron V, Nemouchi F, Hartmann JM, Arvet C, Vizioz C, Tabone C, Hutin L, Batude P, Vinet M Solid-State Electronics, 59(1), 2, 2011 |
| 7 |
Dual strained channel CMOS in FDSOI architecture: New insights on the device performance Le Royer C, Casse M, Cooper D, Andrieu F, Weber O, Brevard L, Perreau P, Damlencourt JF, Baudot S, Previtali B, Tabone C, Allain F, Scheiblin P, Rauer C, Figuet C, Aulnette C, Daval N, Nguyen BY, Bourdelle KK, Gyani J, Valenza M Solid-State Electronics, 65-66, 9, 2011 |
| 8 |
Low-temperature characterization and modeling of advanced GeOI pMOSFETs: Mobility mechanisms and origin of the parasitic conduction Van Den Daele W, Augendre E, Le Royer C, Damlencourt JF, Grandchamp B, Cristoloveanu S Solid-State Electronics, 54(2), 205, 2010 |
| 9 |
Influence of induced stress on enrichment kinetic during local Ge condensation of SiGe/SOI mesas Dechoux N, Damlencourt JF, Rivallin P, Brianceau P, Bernasconi S, Benevent V, Vallee C, Barbe JC, Billon T, Bensahel D Thin Solid Films, 518, S92, 2010 |
| 10 |
High quality Germanium-On-Insulator wafers with excellent hole mobility Nguyen QT, Damlencourt JF, Vincent B, Clavelier L, Morand Y, Gentil P, Cristoloveanu S Solid-State Electronics, 51(9), 1172, 2007 |