화학공학소재연구정보센터
검색결과 : 9건
No. Article
1 Influence of high-temperature processing on the surface properties of bulk AlN substrates
Tojo S, Yamamoto R, Tanaka R, Thieu QT, Togashi R, Nagashima T, Kinoshita T, Dalmau R, Schlesser R, Murakami H, Collazo R, Koukitu A, Monemar B, Sitar Z, Kumagai Y
Journal of Crystal Growth, 446, 33, 2016
2 Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates
Dalmau R, Moody B, Schlesser R, Mita S, Xie J, Feneberg M, Neuschl B, Thonke K, Collazo R, Rice A, Tweedie J, Sitar Z
Journal of the Electrochemical Society, 158(5), H530, 2011
3 Seeded growth of AlN on SiC substrates and defect characterization
Lu P, Edgar JH, Cao C, Hohn K, Dalmau R, Schlesser R, Sitar Z
Journal of Crystal Growth, 310(10), 2464, 2008
4 Synthesis of erbium-doped gallium nitride crystals by the ammonothermal route
Adekore BT, Callahan MJ, Bouthillette L, Dalmau R, Sitar Z
Journal of Crystal Growth, 308(1), 71, 2007
5 Characterization of bulk grown GaN and AlN single crystal materials
Raghothamachar B, Bai J, Dudley M, Dalmau R, Zhuang DJ, Herro Z, Schlesser R, Sitar Z, Wang BG, Callahan M, Rakes K, Konkapaka P, Spencer M
Journal of Crystal Growth, 287(2), 349, 2006
6 AlN bulk crystals grown on SiC seeds
Dalmau R, Schlesser R, Rodriguez BJ, Nemanich RJ, Sitar Z
Journal of Crystal Growth, 281(1), 68, 2005
7 Crucible materials for growth of aluminum nitride crystals
Schlesser R, Dalmau R, Zhuang D, Collazo R, Sitar Z
Journal of Crystal Growth, 281(1), 75, 2005
8 Seeded growth of AlN bulk single crystals by sublimation
Schlesser R, Dalmau R, Sitar Z
Journal of Crystal Growth, 241(4), 416, 2002
9 Synchrotron white beam topography characterization of physical vapor transport grown AlN and ammonothermal GaN
Raghothamachar B, Vetter WM, Dudley M, Dalmau R, Schlesser R, Sitar Z, Michaels E, Kolis JW
Journal of Crystal Growth, 246(3-4), 271, 2002