검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors Arehart AR, Sasikumar A, Rajan S, Via GD, Poling B, Winningham B, Heller ER, Brown D, Pei Y, Recht F, Mishra UK, Ringel SA Solid-State Electronics, 80, 19, 2013 |
| 2 |
Midgap defects in 4H-, 6H- and 3C-SiC detected by deep level optical spectroscopy Reshanov SA, Schneider K, Helbig R, Pensl G, Nagasawa H, Schoner A Materials Science Forum, 457-460, 513, 2004 |
| 3 |
Spectroscopic investigation of vanadium acceptor level in 4H and 6H-SiC Lauer V, Bremond G, Souifi A, Guillot G, Chourou K, Madar R, Clerjaud B Materials Science Forum, 338-3, 635, 2000 |