화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Suppression of gate-induced drain leakage by optimization of junction profiles in 22 nm and 32 nm SOI nFETs
Schenk A
Solid-State Electronics, 54(2), 115, 2010
2 Multi-Subband Monte Carlo study of device orientation effects in ultra-short channel DGSOI
Sampedro C, Gamiz F, Godoy A, Valin R, Garcia-Loureiro A, Ruiz FG
Solid-State Electronics, 54(2), 131, 2010
3 Parameter sensitivity for optimal design of 65 nm node double gate SOI transistors
Lim TC, Armstrong GA
Solid-State Electronics, 49(6), 1034, 2005