검색결과 : 9건
No. | Article |
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1 |
Continuous hot-wire chemical vapor deposition on moving glass substrates Bink A, Brinza M, Jongen JPH, Schropp REI Thin Solid Films, 517(12), 3588, 2009 |
2 |
Growth of device quality 4H-SiC by high velocity epitaxy Yakimova R, Syvajarvi M, Ciechonski RR, Wahab Q Materials Science Forum, 457-460, 201, 2004 |
3 |
Plasma-enhanced metal organic chemical vapor deposition of high purity copper thin films using plasma reactor with the H atom source Jin HJ, Shiratani M, Kawasaki T, Fukuzawa T, Kinoshita T, Watanabe Y, Kawasaki H, Toyofuku M Journal of Vacuum Science & Technology A, 17(3), 726, 1999 |
4 |
A novel model of hydrogen plasma assisted chemical vapor deposition of copper Lakshmanan SK, Gill WN Thin Solid Films, 338(1-2), 24, 1999 |
5 |
Reduction of tin oxide by hydrogen radicals Wallinga J, Arnoldbik WM, Vredenberg AM, Schropp REI, van der Weg WF Journal of Physical Chemistry B, 102(32), 6219, 1998 |
6 |
Experiments on the plasma assisted chemical vapor deposition of copper Lakshmanan SK, Gill WN Journal of Vacuum Science & Technology A, 16(4), 2187, 1998 |
7 |
Comparative-Study of Properties of A-Si-H Films Produced by Hot-Filament CVD, Glow-Discharge CVD and Their Hybrid Version Kumbhar AA, Kshirsagar ST Thin Solid Films, 283(1-2), 49, 1996 |
8 |
Hydrogenated Amorphous-Silicon Films Prepared at Low Substrate-Temperature on a Cathode of an Asymmetric RF Plasma CVD System Seth T, Dixit PN, Mukherjee C, Anandan C, Bhattacharyya R Thin Solid Films, 264(1), 11, 1995 |
9 |
Atomic Layer Epitaxy Deposition Processes Bedair SM Journal of Vacuum Science & Technology B, 12(1), 179, 1994 |