| 1 |
Influence of stacking faults on the quality of GaN films grown on sapphire substrate using a sputtered AIN nucleation layer
Chen ZB, Zhang JC, Xu SR, Xue JS, Jiang T, Hao Y
Materials Research Bulletin, 89, 193, 2017 |
| 2 |
Effect of oxygen-ion motion on dielectric properties of Ba0.6Sr0.4TiO3 thick films
Xu Q, Zhan D, Huang DP, Liu HX, Chen W, Zhang F
Materials Research Bulletin, 70, 99, 2015 |
| 3 |
Effect of annealing on Bridgman grown organic scintillation material of trans-stilbene
Vijayan N, Bhagavannarayana G, Maurya KK, Haranath D, Rathi B, Balamurugan N, Sharma YK, Ramasamy P
Materials Chemistry and Physics, 132(2-3), 453, 2012 |
| 4 |
Sodium sulfanilate dihydrate (SSDH) single crystals grown by conventional slow evaporation and Sankaranarayanan-Ramasamy (SR) method and its comparative characterization analysis
Pandian MS, Ramasamy P
Materials Chemistry and Physics, 132(2-3), 1019, 2012 |
| 5 |
The Effect of Hydrogen Annealing on Oxygen Precipitation Behavior and Gate Oxide Integrity in Czochralski Si Wafers
Abe H, Suzuki I, Koya H
Journal of the Electrochemical Society, 144(1), 306, 1997 |
