화학공학소재연구정보센터
검색결과 : 11건
No. Article
1 Influence of hydrogen pre-growth flow on indium incorporation into InGaN layers
Czernecki R, Grzanka E, Strak P, Targowski G, Krukowski S, Perlin P, Suski T, Leszczynski M
Journal of Crystal Growth, 464, 123, 2017
2 Effect of hydrogen during growth of quantum barriers on the properties of InGaN quantum wells
Czernecki R, Grzanka E, Smalc-Koziorowska J, Grzanka S, Schiavon D, Targowski G, Plesiewicz J, Prystawko P, Suski T, Perlin P, Leszczynski M
Journal of Crystal Growth, 414, 38, 2015
3 Properties of InGaN/GaN multiquantum wells grown on semipolar (20-21) substrates with different miscuts
Sarzynski M, Suski T, Czernecki R, Grzanka E, Marona L, Khachapuridze A, Drozdz P, Pieniak K, Domagala JZ, Leszczynski M, Perlin P
Journal of Crystal Growth, 423, 28, 2015
4 Influence of hydrogen and TMIn on indium incorporation in MOVPE growth of InGaN layers
Czernecki R, Kret S, Kempisty P, Grzanka E, Plesiewicz J, Targowski G, Grzanka S, Bilska M, Smalc-Koziorowska J, Krukowski S, Suski T, Perlin P, Leszczynski M
Journal of Crystal Growth, 402, 330, 2014
5 Indium incorporation into InGaN and InAlN layers grown by metalorganic vapor phase epitaxy
Leszczynski M, Czernecki R, Krukowski S, Krysko M, Targowski G, Prystawko P, Plesiewicz J, Perlin P, Suski T
Journal of Crystal Growth, 318(1), 496, 2011
6 Fabrication and properties of GaN-based lasers
Perlin P, Swietlik T, Marona L, Czernecki R, Suski T, Leszczynski M, Grzegory I, Krukowski S, Nowak G, Kamler G, Czerwinski A, Plusa M, Bednarek M, Rybinski J, Porowski S
Journal of Crystal Growth, 310(17), 3979, 2008
7 Selective etching of dislocations in violet-laser diode structures
Kamler G, Smalc J, Wozniak M, Weyher JL, Czernecki R, Targowski G, Leszczynski M, Grzegory I, Porowski S
Journal of Crystal Growth, 293(1), 18, 2006
8 Control of Mg doping of GaN in RF-plasma molecular beam epitaxy
Feduniewicz A, Skierbiszewski C, Siekacz M, Wasilewski ZR, Sproule I, Grzanka S, Jakiela R, Borysiuk J, Kamler G, Litwin-Staszewska E, Czernecki R, Bockowski M, Porowski S
Journal of Crystal Growth, 278(1-4), 443, 2005
9 Properties of InGaN blue laser diodes grown on bulk GaN substrates
Perlin P, Suski T, Leszczynski M, Prystawko P, Swietlik T, Marona L, Wisniewski P, Czernecki R, Nowak G, Weyher JL, Kamler G, Borysiuk J, Litwin-Staszewska E, Dmowski L, Piotrzkowski R, Franssen G, Grzanka S, Grzegory I, Porowski S
Journal of Crystal Growth, 281(1), 107, 2005
10 Selective etching and TEM study of inversion domains in Mg-doped GaN epitaxial layers
Kamler G, Borysiuk J, Weyher JL, Czernecki R, Leszczynski M, Grzegory I, Porowski S
Journal of Crystal Growth, 282(1-2), 45, 2005