검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Contact Area-Dependent Electron Transport in Au/n-type Ge Schottky Junction Kim H, Lee DH, Myung HS Korean Journal of Materials Research, 26(8), 412, 2016 |
| 2 |
Compact modeling solutions for short-channel SOI Schottky barrier MOSFETs Schwarz M, Holtij T, Kloes A, Iniguez B Solid-State Electronics, 82, 86, 2013 |
| 3 |
Macromolecule-semiconductor interfaces: From enzyme immobilization to photoelectrocatalytical applications Skorupska K, Lewerenz HJ, Smith JR, Kulesza PJ, Mernagh D, Campbell SA Journal of Electroanalytical Chemistry, 662(1), 169, 2011 |
| 4 |
Experimental characterization of the subthreshold leakage current in triple-gate FinFETs Tsormpatzoglou A, Dimitriadis CA, Mouis M, Ghibaudo G, Collaert N Solid-State Electronics, 53(3), 359, 2009 |
| 5 |
Mechanism of current leakage through metal/n-GaN interfaces Oyama S, Hashizume T, Hasegawa H Applied Surface Science, 190(1-4), 322, 2002 |
| 6 |
Development of scanning displacement current microscope Okuda A, Majima Y, Iwamoto M Molecular Crystals and Liquid Crystals Science and Technology. Section A. Molecular Crystals and Liquid Crystals, 370, 297, 2001 |
| 7 |
The waveform separation of displacement current and tunneling current using a scanning vibrating probe Majima Y, Uehara S, Masuda T, Okuda A, Iwamoto M Thin Solid Films, 393(1-2), 204, 2001 |