검색결과 : 20건
No. | Article |
---|---|
1 |
Hydrogen Plasmas Processing of Graphene Surfaces Despiau-Pujo E, Davydova A, Cunge G, Graves DB Plasma Chemistry and Plasma Processing, 36(1), 213, 2016 |
2 |
Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing Petit-Etienne C, Darnon M, Vallier L, Pargon E, Cunge G, Boulard F, Joubert O, Banna S, Lill T Journal of Vacuum Science & Technology B, 28(5), 926, 2010 |
3 |
Velocity distribution function of sputtered gallium atoms during inductively coupled argon plasma treatment of a GaAs surface Despiau-Pujo E, Chabert P, Ramos R, Cunge G, Sadeghi N Journal of Vacuum Science & Technology A, 27(2), 356, 2009 |
4 |
Gas temperature measurement in CF4, SF6, O-2, Cl-2, and HBr inductively coupled plasmas Cunge G, Ramos R, Vempaire D, Touzeau M, Neijbauer M, Sadeghi N Journal of Vacuum Science & Technology A, 27(3), 471, 2009 |
5 |
Plasma reactor dry cleaning strategy after TaC, MoN, WSi, W, and WN etching processes Ramosa R, Cunge G, Joubert O, Lill T Journal of Vacuum Science & Technology B, 27(1), 113, 2009 |
6 |
Plasma reactor dry cleaning strategy after TiN, TaN and HfO2 etching processes Ramos R, Cunge G, Joubert O Journal of Vacuum Science & Technology B, 26(1), 181, 2008 |
7 |
Surface roughness generated by plasma etching processes of silicon Martina M, Cunge G Journal of Vacuum Science & Technology B, 26(4), 1281, 2008 |
8 |
On the interest of carbon-coated plasma reactor for advanced gate stack etching processes Ramos R, Cunge G, Joubert O Journal of Vacuum Science & Technology A, 25(2), 290, 2007 |
9 |
Etching mechanisms of HfO2, SiO2, and poly-Si substrates in BCl3 plasmas Sungauer E, Pargon E, Mellhaoui X, Ramos R, Cunge G, Vallier L, Joubert O, Lill T Journal of Vacuum Science & Technology B, 25(5), 1640, 2007 |
10 |
Poly-Si/TiN/HfO2 gate stack etching in high-density plasmas Le Gouil A, Joubert O, Cunge G, Chevolleau T, Vallier L, Chenevier B, Matko I Journal of Vacuum Science & Technology B, 25(3), 767, 2007 |