화학공학소재연구정보센터
검색결과 : 20건
No. Article
1 Hydrogen Plasmas Processing of Graphene Surfaces
Despiau-Pujo E, Davydova A, Cunge G, Graves DB
Plasma Chemistry and Plasma Processing, 36(1), 213, 2016
2 Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing
Petit-Etienne C, Darnon M, Vallier L, Pargon E, Cunge G, Boulard F, Joubert O, Banna S, Lill T
Journal of Vacuum Science & Technology B, 28(5), 926, 2010
3 Velocity distribution function of sputtered gallium atoms during inductively coupled argon plasma treatment of a GaAs surface
Despiau-Pujo E, Chabert P, Ramos R, Cunge G, Sadeghi N
Journal of Vacuum Science & Technology A, 27(2), 356, 2009
4 Gas temperature measurement in CF4, SF6, O-2, Cl-2, and HBr inductively coupled plasmas
Cunge G, Ramos R, Vempaire D, Touzeau M, Neijbauer M, Sadeghi N
Journal of Vacuum Science & Technology A, 27(3), 471, 2009
5 Plasma reactor dry cleaning strategy after TaC, MoN, WSi, W, and WN etching processes
Ramosa R, Cunge G, Joubert O, Lill T
Journal of Vacuum Science & Technology B, 27(1), 113, 2009
6 Plasma reactor dry cleaning strategy after TiN, TaN and HfO2 etching processes
Ramos R, Cunge G, Joubert O
Journal of Vacuum Science & Technology B, 26(1), 181, 2008
7 Surface roughness generated by plasma etching processes of silicon
Martina M, Cunge G
Journal of Vacuum Science & Technology B, 26(4), 1281, 2008
8 On the interest of carbon-coated plasma reactor for advanced gate stack etching processes
Ramos R, Cunge G, Joubert O
Journal of Vacuum Science & Technology A, 25(2), 290, 2007
9 Etching mechanisms of HfO2, SiO2, and poly-Si substrates in BCl3 plasmas
Sungauer E, Pargon E, Mellhaoui X, Ramos R, Cunge G, Vallier L, Joubert O, Lill T
Journal of Vacuum Science & Technology B, 25(5), 1640, 2007
10 Poly-Si/TiN/HfO2 gate stack etching in high-density plasmas
Le Gouil A, Joubert O, Cunge G, Chevolleau T, Vallier L, Chenevier B, Matko I
Journal of Vacuum Science & Technology B, 25(3), 767, 2007