검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
Area-selective chemical vapor deposition of Co for Cu capping layer Ryu SW, Kim S, Yoon J, Tanskanen JT, Kim H, Lee HBR Current Applied Physics, 16(1), 88, 2016 |
| 2 |
Cu filling into trenches with Co (00.2) layer by using high-vacuum magnetron sputtering in N-2-addded Ar gas Itoh M, Iida H, Uhara Y, Saito S Applied Surface Science, 354, 124, 2015 |
| 3 |
Ultrathin Cr added Ru film as a seedless Cu diffusion barrier for advanced Cu interconnects Hsu KC, Perng DC, Yeh JB, Wang YC Applied Surface Science, 258(18), 7225, 2012 |
| 4 |
Plasma-enhanced atomic layer deposition of Cu-Mn films with formation of a MnSixOy barrier layer Moon DY, Han DS, Park JH, Shin SY, Park JW, Kim BM, Cho JY Thin Solid Films, 521, 146, 2012 |
| 5 |
Ultrathin amorphous Ni-Ti film as diffusion barrier for Cu interconnection Liu BT, Yang L, Li XH, Wang KM, Guo Z, Chen JH, Li M, Zhao DY, Zhao QX, Zhang XY Applied Surface Science, 257(7), 2920, 2011 |
| 6 |
Effects of the substrate temperature on the Cu seed layer formed using atomic layer deposition Moon DY, Han DS, Shin SY, Park JW, Kim BM, Kim JH Thin Solid Films, 519(11), 3636, 2011 |
| 7 |
Low temperature deposited Zr-B film applicable to extremely thin barrier for copper interconnect Takeyama MB, Noya A, Nakadai Y, Kambara S, Hatanaka M, Hayasaka Y, Aoyagi E, Machida H, Masu K Applied Surface Science, 256(4), 1222, 2009 |
| 8 |
Study of the effects of an adatom Sn on the Cu surface electromigration using a first principles method Yu C, Liu JY, Lu H, Chen JM Applied Surface Science, 253(21), 8652, 2007 |
| 9 |
Sacrificial CVD film etch-back process for air-gap Cu interconnects Uno S, Katsuyama K, Noguchi J, Sato K, Oshima T, Katsuyama M, Hara K Thin Solid Films, 515(12), 4960, 2007 |
| 10 |
Phase transformation of Ni-B, Ni-P diffusion barrier deposited electrolessly on Cu interconnect Choi JW, Hwang GH, Han WK, Kang SG Applied Surface Science, 253(4), 2171, 2006 |