검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
High-periphery GaN HEMT modeling up to 65 GHz and 200 degrees C Crupi G, Raffo A, Vadala V, Vannini G, Caddemi A Solid-State Electronics, 152, 11, 2019 |
| 2 |
Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design l Crupi G, Raffo A, Avolio G, Bosi G, Sivverini G, Palomba F, Caddemi A, Schreurs DMMP, Vannini G Solid-State Electronics, 104, 25, 2015 |
| 3 |
A link between noise parameters and light exposure in GaAs pHEMT's Caddemi A, Crupi G, Salvo G Solid-State Electronics, 105, 16, 2015 |
| 4 |
A comprehensive review on microwave FinFET modeling for progressing beyond the state of art Crupi G, Schreurs DMMP, Raskin JP, Caddemi A Solid-State Electronics, 80, 81, 2013 |
| 5 |
Microwave noise modeling of FinFETs Crupi G, Caddemi A, Schreurs DMMP, Wiatr W, Mercha A Solid-State Electronics, 56(1), 18, 2011 |
| 6 |
Investigation on the thermal behavior of microwave GaN HEMTs Crupi G, Avolio G, Raffo A, Barmuta P, Schreurs DMMP, Caddemi A, Vannini G Solid-State Electronics, 64(1), 28, 2011 |
| 7 |
Analytical extraction of small and large signal models for FinFET varactors Crupi G, Schreurs DMMP, Dehan M, Xiao D, Caddemi A, Mercha A, Decoutere S Solid-State Electronics, 52(5), 704, 2008 |
| 8 |
Scalable and multibias high frequency modeling of multi-fin FETs Crupi G, Schreurs D, Parvais B, Caddemi A, Mercha A, Decoutere S Solid-State Electronics, 50(11-12), 1780, 2006 |
| 9 |
On the soft breakdown phenomenon in AlGaAs/InGaAs HEMT: An experimental study down to cryogenic temperature Caddemi A, Crupi G, Donato N Solid-State Electronics, 49(6), 928, 2005 |