화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Liquid-phase epitaxial growth of heavily doped Al p-type contact layers for SiC devices and resulting ohmic contacts
Syrkin A, Dmitriev V, Kovalenkov O, Bauman D, Crofton J
Materials Science Forum, 389-3, 291, 2002
2 Finding the optimum Al-Ti alloy composition for use as an ohmic contact to p-type SiC
Crofton J, Mohney SE, Williams JR, Isaacs-Smith T
Solid-State Electronics, 46(1), 109, 2002
3 Morphological study of the Al-Ti ohmic contact to p-type SiC
Mohney SE, Hull BA, Lin JY, Crofton J
Solid-State Electronics, 46(5), 689, 2002
4 Low resistance ohmic contacts to n-SiC using niobium
Oder TN, Williams JR, Bryant KW, Bozack MJ, Crofton J
Materials Science Forum, 338-3, 997, 2000
5 Searching for device processing compatible ohmic contacts to implanted p-type 4H-SiC
Luo YB, Yan F, Tone K, Zhao JH, Crofton J
Materials Science Forum, 338-3, 1013, 2000