| 1 |
Atomistic comparative study of VUV photodeposited silicon nitride on InP(100) by simulation and atomic force microscopy
Flicstein J, Guillonneau E, Marquez J, Chun LSHK, Maisonneuve D, David C, Wang Z, Palmier JF, Courant JL
Applied Surface Science, 154, 337, 2000 |
| 2 |
Electrical-Properties of Metal-Insulator-Semiconductor Structures with Silicon-Nitride Dielectrics Deposited by Low-Temperature Plasma-Enhanced Chemical-Vapor-Deposition Distributed Electron-Cyclotron-Resonance
Hugon MC, Delmotte F, Agius B, Courant JL
Journal of Vacuum Science & Technology A, 15(6), 3143, 1997 |
| 3 |
Low temperature deposition of SiNx : H using SiH4-N-2 or SiH4-NH3 distributed electron cyclotron resonance microwave plasma
Delmotte F, Hugon MC, Agius B, Courant JL
Journal of Vacuum Science & Technology B, 15(6), 1919, 1997 |
| 4 |
Low-Temperature Deposition of Silicon-Nitride Films by Distributed Electron-Cyclotron-Resonance Plasma-Enhanced Chemical-Vapor-Deposition
Sitbon S, Hugon MC, Agius B, Abel F, Courant JL, Puech M
Journal of Vacuum Science & Technology A, 13(6), 2900, 1995 |
