화학공학소재연구정보센터
검색결과 : 8건
No. Article
1 Different architectures of relaxed Si1-xGex/Si pseudo-substrates grown by low-pressure chemical vapor deposition: Structural and morphological characteristics
Raissi M, Regula G, Belgacem CH, Rochdi N, Bozzo-Escoubas S, Coudreau C, Hollander B, Fnaiech M, D'Avitaya FA, Lazzari JL
Journal of Crystal Growth, 328(1), 18, 2011
2 Surface morphology and structure of ultra-thin magnesium oxide grown on (100) silicon by atomic layer deposition oxidation
Rochdi N, Liudvikouskaya K, Descoins M, Raissi M, Coudreau C, Lazzari JL, Oughaddou H, D'Avitaya FA
Thin Solid Films, 519(19), 6302, 2011
3 Inter-diffusion of cobalt and silicon through an ultra thin aluminum oxide layer
El Asri T, Raissi M, Vizzini S, El Maachi A, Ameziane EL, d'Avitaya FA, Lazzari JL, Coudreau C, Oughaddou H, Aufray B, Kaddouri A
Applied Surface Science, 256(9), 2731, 2010
4 Interfacial solid phase reactions in cobalt/aluminum oxide/silicon(001) system
Raissi M, Vizzini S, Langer G, Rochdi N, Oughaddou H, Coudreau C, Nitsche S, D'Avitaya FA, Aufray B, Lazzari JL
Thin Solid Films, 518(21), 5992, 2010
5 Controlled growth of aluminum oxide thin films on hydrogen terminated Si(001) surface
Vizzini S, Oughaddou H, Leandri C, Lazarov VK, Kohn A, Nguyen K, Coudreau C, Biberian JP, Ealet B, Lazzari JL, d'Avitaya FA, Aufray B
Journal of Crystal Growth, 305(1), 26, 2007
6 Growth of magnetic tunnel junctions on Si(001) substrates
Mendez SO, Le Thanh V, Ozerov I, Ferrero S, Coudreau C, Lazzari JL, d'Avitaya FA, Ravel L, Boivin P
Thin Solid Films, 515(16), 6501, 2007
7 Structural characterization of Si1-xGex/Si strained superlattices and relaxed virtual substrates grown by chemical vapor deposition
Bozzo S, Lazzari JL, Hollander B, Coudreau C, Ronda A, Mantl S, D'Avitaya FA, Derrien J
Applied Surface Science, 164, 35, 2000
8 Chemical vapor deposition of silicon-germanium heterostructures
Bozzo S, Lazzari JL, Coudreau C, Ronda A, d'Avitaya FA, Derrien J, Mesters S, Hollaender B, Gergaud P, Thomas O
Journal of Crystal Growth, 216(1-4), 171, 2000