| 1 |
First-principles predictions of ruthenium-phosphorus and ruthenium-boron glassy structures and chemical vapor deposition of thin amorphous ruthenium-boron alloy films
Bost DE, Kim HW, Chou CY, Hwang GS, Ekerdt JG
Thin Solid Films, 622, 56, 2017 |
| 2 |
Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido) tantalum complex
Han JH, Kim HY, Lee SC, Kim DH, Park BK, Park JS, Jeon DJ, Chung TM, Kim CG
Applied Surface Science, 362, 176, 2016 |
| 3 |
The addition of aluminium to ruthenium liner layers for use as copper diffusion barriers
Mccoy AP, Bogan J, Walsh L, Byrne C, Casey P, Hughes G
Applied Surface Science, 307, 677, 2014 |
| 4 |
Chemical vapor deposition of ruthenium-phosphorus alloy thin films: Using phosphine as the phosphorus source
Bost DE, Ekerdt JG
Thin Solid Films, 558, 160, 2014 |
| 5 |
Self-forming AlOx layer as Cu diffusion barrier on porous low-k film
Perng DC, Yeh JB, Hsu KC, Tsai SW
Thin Solid Films, 518(6), 1648, 2010 |
| 6 |
Ru/WCoCN as a seedless Cu barrier system for advanced Cu metallization
Perng DC, Yeh JB, Hsu KC
Applied Surface Science, 256(3), 688, 2009 |
| 7 |
Time-to-failure analysis of 5 nm amorphous Ru(P) as a copper diffusion barrier
Henderson LB, Ekerdt JG
Thin Solid Films, 517(5), 1645, 2009 |
| 8 |
Leakage current and paramagnetic defects in SiCN dielectrics for copper diffusion barriers
Kobayashi K, Yokoyama H, Endoh M
Applied Surface Science, 254(19), 6222, 2008 |
