1 |
Strain distribution in freestanding Si/SixNy membranes studied by transmission electron microscopy Gao HY, Ikeda K, Hata S, Nakashima H, Wang D, Nakashima H Thin Solid Films, 518(23), 6787, 2010 |
2 |
Lattice parameter measurement in single crystalline LiCoO2 particles by convergent beam electron diffraction Gabrisch H, Xing Q Solid State Ionics, 179(37), 2104, 2008 |
3 |
Selected area and convergent-beam electron diffraction of LaGaO3 and LaGa0.9Mg0.1O2.95 - Space group determinations and identification of anti-phase domain structure Ogata Y, Tsuda K, Yamaguchi M, Fumoto T, Furuya T, Hashimoto TU Solid State Ionics, 178(15-18), 1113, 2007 |
4 |
Internal stress field in ultrafine grained aluminium fabricated by accumulative roll-bonding Ueji R, Taniguchi J, Sumida N, Tanaka K, Tsuji N Materials Science Forum, 512, 123, 2006 |
5 |
Determinability of complete residual strain tensor from multiple CBED patterns Morawiec A Materials Science Forum, 524-525, 115, 2006 |
6 |
Manganese distribution in ferromagnetic gallium manganese nitride epitaxial film grown by plasma enhanced molecular beam epitaxy Chang JY, Kim GH, Lee WY, Myoung JM Thin Solid Films, 472(1-2), 144, 2005 |
7 |
Identification of chirality of enantiomorphic TaSi2 crystallites by convergent-beam electron diffraction Sakamoto H, Fujii A, Inui H, Tanaka K, Yamaguchi M, Ishizuka K Materials Science Forum, 426-4, 1783, 2003 |
8 |
Strain induced by Ti salicidation in sub-quarter-micron CMOS devices, as measured by TEM/CBED Benedetti A, Cullis AG, Armigliato A, Balboni R, Frabboni S, Mastracchio GF, Pavia G Applied Surface Science, 188(1-2), 214, 2002 |
9 |
Local lattice strain measurements in semiconductor devices by using convergent-beam electron diffraction Toda A, Ikarashi N, Ono H Journal of Crystal Growth, 210(1-3), 341, 2000 |
10 |
Analysis of crystal structure and phase transition of LaCrO3 by various diffraction measurements Hashimoto T, Tsuzuki N, Kishi A, Takagi K, Tsuda K, Tanaka M, Oikawa K, Kamiyama T, Yoshida K, Tagawa H, Dokiya M Solid State Ionics, 132(3-4), 181, 2000 |