검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Analysis of resistive switching processes in TiN/Ti/HfO2/W devices to mimic electronic synapses in neuromorphic circuits Gonzalez-Cordero G, Pedro M, Martin-Martinez J, Gonzalez MB, Jimenez-Molinos F, Campabadal F, Nafria N, Roldan JB Solid-State Electronics, 157, 25, 2019 |
| 2 |
Effect of anodic oxidation time on resistive switching memory behavior based on amorphous TiO2 thin films device Yu YM, Yang F, Mao SS, Zhu SH, Jia YF, Yuan L, Salmen M, Sun B Chemical Physics Letters, 706, 477, 2018 |
| 3 |
Metal ion formed conductive filaments by redox process induced nonvolatile resistive switching memories in MoS2 film Xia YD, Sun B, Wang HY, Zhou GD, Kan X, Zhang Y, Zhao Y Applied Surface Science, 426, 812, 2017 |
| 4 |
A new parameter to characterize the charge transport regime in Ni/HfO2/Si-n(+)-based RRAMs Villena MA, Roldan JB, Gonzalez MB, Gonzalez-Rodelas P, Jimenez-Molinos F, Campabadal F, Barrera D Solid-State Electronics, 118, 56, 2016 |
| 5 |
Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology Sun HT, Liu Q, Li CF, Long SB, Lv HB, Bi C, Huo ZL, Li L, Liu M Advanced Functional Materials, 24(36), 5679, 2014 |
| 6 |
Response to "Comment on Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM" Liu Q, Jun S, Lv HB, Long SB, Li L, Yin KB, Wan N, Li YT, Sun LT, Liu M Advanced Materials, 25(2), 165, 2013 |