검색결과 : 5건
No. | Article |
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1 |
Improved resistive switching performance in Cu-cation migrated MoS2 based ReRAM device incorporated with tungsten nitride bottom electrode Prakash R, Sharma S, Kumar A, Kaur D Current Applied Physics, 19(3), 260, 2019 |
2 |
Resistive switching functional quantum-dot light-emitting diodes Park YR, Choi WK, Hong YJ Current Applied Physics, 19(2), 102, 2019 |
3 |
Self-erasable titanium oxide resistive memory devices Jang JG, Choi HH, Kim MS, Kim JK, Chung SJ, Park JH Journal of Industrial and Engineering Chemistry, 78, 338, 2019 |
4 |
Improved resistive switching characteristics of a Pt/HfO2/Pt resistor by controlling anode interface with forming and switching polarity Jung YC, Seong S, Lee T, Kim SY, Park IS, Ahn J Applied Surface Science, 435, 117, 2018 |
5 |
Impacts of Au-doping on the performance of Cu/HfO2/Pt RRAM devices Tan TT, Guo TT, Chen X, Li XJ, Liu ZT Applied Surface Science, 317, 982, 2014 |