검색결과 : 15건
| No. | Article |
|---|---|
| 1 |
Measurement and thermal modeling of sapphire substrate temperature at III-Nitride MOVPE conditions Creighton JR, Coltrin ME, Figiel JJ Journal of Crystal Growth, 464, 132, 2017 |
| 2 |
Photoelectrochemical etching of epitaxial InGaN thin films: self-limited kinetics and nanostructuring Xiao XY, Fischer AJ, Coltrin ME, Lu P, Koleske DD, Wang GT, Polsky R, Tsao JY Electrochimica Acta, 162, 163, 2015 |
| 3 |
Analysis of channel confined selective area growth in evolutionary growth of GaN on SiO2 Leung B, Tsai MC, Song J, Zhang Y, Xiong KL, Yuan G, Coltrin ME, Han J Journal of Crystal Growth, 426, 95, 2015 |
| 4 |
Connection between GaN and InGaN growth mechanisms and surface morphology Koleske DD, Lee SR, Crawford MH, Cross KC, Coltrin ME, Kempisty JM Journal of Crystal Growth, 391, 85, 2014 |
| 5 |
Chemical kinetics and mass transport effects in solution-based selective-area growth of ZnO nanorods Coltrin ME, Hsu JWP, Scrymgeour DA, Creighton JR, Simmons NC, Matzke CM Journal of Crystal Growth, 310(3), 584, 2008 |
| 6 |
Fundamental chemistry and modeling of group-III nitride MOVPE Creighton JR, Wang GT, Coltrin ME Journal of Crystal Growth, 298, 2, 2007 |
| 7 |
Modeling the parasitic chemical reactions of AlGaN organometallic vapor-phase epitaxy Coltrin ME, Creighton JR, Mitchell CC Journal of Crystal Growth, 287(2), 566, 2006 |
| 8 |
Using optical reflectance to measure GaN nucleation layer decomposition kinetics Koleske DD, Coltrin ME, Russell MJ Journal of Crystal Growth, 279(1-2), 37, 2005 |
| 9 |
Scaling relationships for analyzing kinetics in GaN epitaxial lateral overgrowth Coltrin ME, Mitchell CC Journal of Crystal Growth, 261(1), 30, 2004 |
| 10 |
Nature of the parasitic chemistry during AlGaInNOMVPE Creighton JR, Wang GT, Breiland WG, Coltrin ME Journal of Crystal Growth, 261(2-3), 204, 2004 |