검색결과 : 47건
| No. | Article |
|---|---|
| 1 |
Mobility extraction for short channel UTBB-FDSOI MOSFETs under back bias using an accurate inversion charge density model Trojman L, Ragnarsson LA, Collaert N Solid-State Electronics, 154, 24, 2019 |
| 2 |
Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n plus InAs(Si)/p plus GaSb(Si) Esaki diode El Kazzi S, Alian A, Hsu B, Verhulst AS, Walke A, Favia P, Douhard B, Lu W, del Alamo JA, Collaert N, Merckling C Journal of Crystal Growth, 484, 86, 2018 |
| 3 |
Detailed characterisation of Si Gate-All-Around Nanowire MOSFETs at cryogenic temperatures Boudier D, Cretu B, Simoen E, Veloso A, Collaert N Solid-State Electronics, 143, 27, 2018 |
| 4 |
Low frequency noise assessment in n- and p-channel sub-10 nm triple-gate FinFETs: Part I: Theory and methodology Boudier D, Cretu B, Simoen E, Carin R, Veloso A, Collaert N, Thean A Solid-State Electronics, 128, 102, 2017 |
| 5 |
Low frequency noise assessment in n- and p-channel sub-10 nm triple-gate FinFETs: Part II: Measurements and results Boudier D, Cretu B, Simoen E, Carin R, Veloso A, Collaert N, Thean A Solid-State Electronics, 128, 109, 2017 |
| 6 |
Replacement fin processing for III-V on Si: From FinFets to nanowires Waldron N, Merckling C, Teugels L, Ong P, Sebaai F, Barla K, Collaert N, Thean VY Solid-State Electronics, 115, 81, 2016 |
| 7 |
Comparative analysis of the intrinsic voltage gain and unit gain frequency between SOI and bulk FinFETs up to high temperatures de Oliveira AV, Agopian PGD, Martino JA, Simoen E, Claeys C, Collaert N, Thean A Solid-State Electronics, 123, 124, 2016 |
| 8 |
Staggered band gap n+In0.5Ga0.5As/p + GaAs0.5Sb0.5 Esaki diode investigations for TFET device predictions El Kazzi S, Smets Q, Ezzedini M, Rooyackers R, Verhulst A, Douhard B, Bender H, Collaert N, Merckling C, Heyns MM, Thean A Journal of Crystal Growth, 424, 62, 2015 |
| 9 |
Different stress techniques and their efficiency on triple-gate SOI n-MOSFETs Buuhler RT, Agopian PGD, Collaert N, Simoen E, Claeys C, Martino JA Solid-State Electronics, 103, 209, 2015 |
| 10 |
Integration aspects of strained Ge pFETs Witters L, Eneman G, Mitard J, Vincent B, Hikavyy A, Milenin AP, Mertens S, Thean A, Collaert N Solid-State Electronics, 98, 7, 2014 |