| 1 |
The dependence of the etching property of CoSi2 films in diluted HF solutions on the formation conditions
Zhu SY, Ru GP, Detavernier C, Van Meirhaeghe RL, Cardon E, Li BZ
Applied Surface Science, 178(1-4), 44, 2001 |
| 2 |
Reaction and thermal stability of cobalt disilicide on polysilicon resulting from a Si/Ti/Co multilayer system
Alberti A, La Via F, Rimini F
Journal of Vacuum Science & Technology B, 17(4), 1448, 1999 |
| 3 |
Metal silicides synthesized by high current metal-ion implantation
Liu BX, Gao KY, Zhu HN
Journal of Vacuum Science & Technology B, 17(5), 2277, 1999 |
| 4 |
Formation of Co and Ta silicides on Si(111) and Si(100) substrates from codeposited Co and Ta thin films
Pelleg J
Thin Solid Films, 325(1-2), 60, 1998 |
| 5 |
Selective deposition of TiSi2 on ultra-thin silicon-on-insulator (SOI) wafers
Maa JS, Ulrich B, Hsu ST, Stecker G
Thin Solid Films, 332(1-2), 412, 1998 |
| 6 |
A Comparative-Study of N(+)/P Junction Formation for Deep-Submicron Elevated Source/Drain Metal-Oxide-Semiconductor Field-Effect Transistors
Sun J, Bartholomew RF, Bellur K, Srivastava A, Osburn CM, Masnari NA, Westhoff R
Journal of the Electrochemical Society, 144(10), 3659, 1997 |
| 7 |
Application of high energy resolved X-ray emission spectroscopy for monitoring of silicide formation in Co/SiO2/Si system
Kurmaev EZ, Shamin SN, Galakhov VR, Kasko I
Thin Solid Films, 311(1-2), 28, 1997 |
| 8 |
Activation-Energy for Ni2Si and NiSi Formation Measured over a Wide-Range of Ramp Rates
Colgan EG
Thin Solid Films, 279(1-2), 193, 1996 |
| 9 |
Solid Source Diffusion from Agglomerating Silicide Sources .1. Measurement and Modeling
Tsai JY, Canovai C, Osburn CM, Wang QF, Rose J, Cowen A, Denker MS
Journal of Vacuum Science & Technology B, 12(1), 219, 1994 |
| 10 |
Nondestructive Characterization of the Uniformity of Thin Cobalt Disilicide Films by Raman Microprobe Measurements
Perezrodriguez A, Roca E, Jawhari T, Morante JR, Schreutelkamp RJ
Thin Solid Films, 251(1), 45, 1994 |
