화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Study of resistive random access memory based on TiN/TaOx/TiN integrated into a 65 nm advanced complementary metal oxide semiconductor technology
Diokh T, Le-Roux E, Jeannot S, Cagli C, Jousseaume V, Nodin JF, Gros-Jean M, Gaumer C, Mellier M, Cluzel J, Carabasse C, Candelier P, De Salvo B
Thin Solid Films, 533, 24, 2013
2 Electrical characterization of fast transient phenomena in a Si-rich based non-volatile random access memory
Deleruyelle D, Cluzel J, De Salvo B, Fraboulet D, Mariolle D, Buffet N, Deleonibus S
Solid-State Electronics, 47(10), 1641, 2003