검색결과 : 54건
No. | Article |
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1 |
Two-dimensional carrier mapping at the nanometer-scale on 32 nm node targeted p-MOSFETs using high vacuum scanning spreading resistance microscopy Eyben P, Clarysse T, Mody J, Nazir A, Schulze A, Hantschel T, Vandervorst W Solid-State Electronics, 71, 69, 2012 |
2 |
Understanding device performance by incorporating 2D-carrier profiles from high resolution scanning spreading resistance microscopy into device simulations Nazir A, Eyben P, Clarysse T, Hellings G, Schulze A, Mody J, De Meyer K, Bender H, Vandervorst W Solid-State Electronics, 74, 38, 2012 |
3 |
In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates Shimura Y, Takeuchi S, Nakatsuka O, Vincent B, Gencarelli F, Clarysse T, Vandervorst W, Caymax M, Loo R, Jensen A, Petersen DH, Zaima S Thin Solid Films, 520(8), 3206, 2012 |
4 |
Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealing Hellings G, Rosseel E, Simoen E, Radisic D, Petersen DH, Hansen O, Nielsen PF, Zschatzsch G, Nazir A, Clarysse T, Vandervorst W, Hoffmann TY, De Meyer K Electrochemical and Solid State Letters, 14(1), II39, 2011 |
5 |
Ge Chemical Vapor Deposition on GaAs for Low Resistivity Contacts Vincent B, Firrincieli A, Wang WE, Waldron N, Franquet A, Douhard B, Vandervorst W, Clarysse T, Brammertz G, Loo R, Dekoster J, Meuris M, Caymax M Journal of the Electrochemical Society, 158(3), H203, 2011 |
6 |
Ge1-xSnx stressors for strained-Ge CMOS Takeuchi S, Shimura Y, Nishimura T, Vincent B, Eneman G, Clarysse T, Demeulemeester J, Vantomme A, Dekoster J, Caymax M, Loo R, Sakai A, Nakatsuka O, Zaima S Solid-State Electronics, 60(1), 53, 2011 |
7 |
Nondestructive extraction of junction depths of active doping profiles from photomodulated optical reflectance offset curves Bogdanowicz J, Dortu F, Clarysse T, Vandervorst W, Rosseel E, Nguyen ND, Shaughnessy D, Salnik A, Nicolaides L Journal of Vacuum Science & Technology B, 28(1), C1C1, 2010 |
8 |
Photovoltage versus microprobe sheet resistance measurements on ultrashallow structures Clarysse T, Moussa A, Parmentier B, Bogdanowicz J, Vandervorst W, Bender H, Pfeffer M, Schellenberger M, Nielsen PF, Thorsteinsson S, Lin R, Petersen D Journal of Vacuum Science & Technology B, 28(1), C1C8, 2010 |
9 |
Study of submelt laser induced junction nonuniformities using Therma-Probe Rosseel E, Bogdanowicz J, Clarysse T, Vandervorst W, Ortolland C, Hoffmann T, Salnik A, Nicolaides L, Han SH, Petersen DH, Lin R, Hansen O Journal of Vacuum Science & Technology B, 28(1), C1C21, 2010 |
10 |
Review of electrical characterization of ultra-shallow junctions with micro four-point probes Petersen DH, Hansen O, Hansen TM, Boggild P, Lin R, Kjaer D, Nielsen PF, Clarysse T, Vandervorst W, Rosseel E, Bennett NS, Cowern NEB Journal of Vacuum Science & Technology B, 28(1), C1C27, 2010 |