화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Crack-free GaN deposition on Si substrate with temperature-graded AIN buffer growth and the emission characteristics of overgrown InGaN/GaN quantum wells
Chen CY, Chang WM, Chung WL, Hsieh C, Liao CH, Ting SY, Chen KY, Kiang YW, Yang CC, Su WS, Cheng YC
Journal of Crystal Growth, 396, 1, 2014
2 Impact of strain on gate-induced floating body effect for partially depleted silicon-on-insulator p-type metal-oxide-semiconductor-field-effect-transistors
Lo WH, Chang TC, Dai CH, Chung WL, Chen CE, Ho SH, Tsai JY, Chen HM, Liu GR, Cheng O, Huang CT
Thin Solid Films, 528, 10, 2013
3 Hot Carrier Effect on Gate-Induced Drain Leakage Current in n-MOSFETs with HfO2/Ti1-xNx Gate Stacks
Dai CH, Chang TC, Chu AK, Kuo YJ, Ho SH, Hsieh TY, Lo WH, Chen CE, Shih JM, Chung WL, Dai BS, Chen HM, Xia GR, Cheng O, Huang CT
Electrochemical and Solid State Letters, 15(6), H211, 2012
4 Fuel life cycle emissions for electricity consumption in the world's gaming center-Macao SAR, China
To WM, Lai TM, Chung WL
Energy, 36(8), 5162, 2011
5 Charge trapping induced frequency-dependence degradation in n-MOSFETs with high-k/metal gate stacks
Dai CH, Chang TC, Chu AK, Kuo YJ, Hung YC, Lo WH, Ho SH, Chen CE, Shih JM, Chung WL, Chen HM, Dai BS, Tsai TM, Xia GR, Cheng O, Huang CT
Thin Solid Films, 520(5), 1511, 2011