화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 High-density-plasma (HDP)-CVD oxide to thermal oxide wafer bonding for strained silicon layer transfer applications
Singh R, Radu I, Reiche M, Himcinschi C, Kuck B, Tillack B, Gosele U, Christiansen SH
Applied Surface Science, 253(7), 3595, 2007
2 Uniaxially strained silicon by wafer bonding and layer transfer
Himcinschi C, Radu I, Muster F, Singh R, Reiche M, Petzold M, Gosele U, Christiansen SH
Solid-State Electronics, 51(2), 226, 2007
3 N-channel MOSFETs fabricated on He-implanted and annealed SiGe buffer layers
Mooney PM, Rim K, Christiansen SH, Chan KK, Chu JO, Cai J, Chen H, Jordan-Sweet JL, Yang YY, Boyd DC
Solid-State Electronics, 49(10), 1669, 2005
4 Optical and structural characterization of Si/SiGe heterostructures grown by RTCVD
Sidiki T, Christiansen SH, Chabert S, de Boer WB, Ferrari C, Strunk HP, Torres CMS
Thin Solid Films, 369(1-2), 431, 2000
5 Challenges in the brent field : Implementing depressurization
Christiansen SH, Wilson PM
Journal of Petroleum Technology, 50(2), 75, 1998