화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Silicon Nucleation and Film Evolution on Silicon Dioxide Using Disilane - Rapid Thermal Chemical-Vapor-Deposition of Very Smooth Silicon at High Deposition Rates
Violette KE, Ozturk MC, Christensen KN, Maher DM
Journal of the Electrochemical Society, 143(2), 649, 1996
2 Real-Time Investigation of Nucleation and Growth of Silicon on Silicon Dioxide Using Silane and Disilane in a Rapid Thermal-Processing System
Hu YZ, Diehl DJ, Zhao CY, Wang CL, Liu Q, Irene EA, Christensen KN, Venable D, Maher DM
Journal of Vacuum Science & Technology B, 14(2), 744, 1996
3 Ellipsometry Study of the Nucleation of Si Epitaxy by Electron-Cyclotron-Resonance Plasma Chemical-Vapor-Deposition
Li M, Hu YZ, Irene EA, Liu L, Christensen KN, Maher DM
Journal of Vacuum Science & Technology B, 13(1), 105, 1995
4 A Study of Silicon Epitaxial-Growth on Silicon Substrates Exposed to Ar Electron-Cyclotron-Resonance Plasmas
Buaud PP, Hu YZ, Spanos L, Irene EA, Christensen KN, Venables D, Maher DM
Journal of Vacuum Science & Technology B, 13(4), 1442, 1995
5 Modification of Si Field Emitter Surfaces by Chemical Conversion to SiC
Liu J, Son UT, Stepanova AN, Christensen KN, Wojak GJ, Givargizov EI, Bachmann KJ, Hren JJ
Journal of Vacuum Science & Technology B, 12(2), 717, 1994