검색결과 : 5건
No. | Article |
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1 |
Silicon Nucleation and Film Evolution on Silicon Dioxide Using Disilane - Rapid Thermal Chemical-Vapor-Deposition of Very Smooth Silicon at High Deposition Rates Violette KE, Ozturk MC, Christensen KN, Maher DM Journal of the Electrochemical Society, 143(2), 649, 1996 |
2 |
Real-Time Investigation of Nucleation and Growth of Silicon on Silicon Dioxide Using Silane and Disilane in a Rapid Thermal-Processing System Hu YZ, Diehl DJ, Zhao CY, Wang CL, Liu Q, Irene EA, Christensen KN, Venable D, Maher DM Journal of Vacuum Science & Technology B, 14(2), 744, 1996 |
3 |
Ellipsometry Study of the Nucleation of Si Epitaxy by Electron-Cyclotron-Resonance Plasma Chemical-Vapor-Deposition Li M, Hu YZ, Irene EA, Liu L, Christensen KN, Maher DM Journal of Vacuum Science & Technology B, 13(1), 105, 1995 |
4 |
A Study of Silicon Epitaxial-Growth on Silicon Substrates Exposed to Ar Electron-Cyclotron-Resonance Plasmas Buaud PP, Hu YZ, Spanos L, Irene EA, Christensen KN, Venables D, Maher DM Journal of Vacuum Science & Technology B, 13(4), 1442, 1995 |
5 |
Modification of Si Field Emitter Surfaces by Chemical Conversion to SiC Liu J, Son UT, Stepanova AN, Christensen KN, Wojak GJ, Givargizov EI, Bachmann KJ, Hren JJ Journal of Vacuum Science & Technology B, 12(2), 717, 1994 |