검색결과 : 35건
No. | Article |
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1 |
Compositionally graded InGaN layers grown on vicinal N-face GaN substrates by plasma-assisted molecular beam epitaxy Hestroffer K, Lund C, Koksaldi O, Li HR, Schmidt G, Trippel M, Veit P, Bertram F, Lu N, Wang QX, Christen J, Kim MJ, Mishra UK, Keller S Journal of Crystal Growth, 465, 55, 2017 |
2 |
Metalorganic chemical vapor phase epitaxy of narrow-band distributed Bragg reflectors realized by GaN:Ge modulation doping Berger C, Lesnik A, Zettler T, Schmidt G, Veit P, Dadgar A, Blasing J, Christen J, Strittmatter A Journal of Crystal Growth, 440, 6, 2016 |
3 |
Growth of AlInN/GaN distributed Bragg reflectors with improved interface quality Berger C, Dadgar A, Blasing J, Lesnik A, Veit P, Schmidt G, Hempel T, Christen J, Krost A, Strittmatter A Journal of Crystal Growth, 414, 105, 2015 |
4 |
Growth of InGaN/GaN core-shell structures on selectively etched GaN rods by molecular beam epitaxy Albert S, Bengoechea-Encabo A, Sabido-Siller M, Mueller M, Schmidt G, Metzner S, Veit P, Bertram F, Sanchez-Garcia MA, Christen J, Calleja E Journal of Crystal Growth, 392, 5, 2014 |
5 |
MOVPE growth of semi-polar GaN light-emitting diode structures on planar Si(112) and Si(113) substrates Ravash R, Dadgar A, Bertram F, Dempewolf A, Metzner S, Hempel T, Christen J, Krost A Journal of Crystal Growth, 370, 288, 2013 |
6 |
Investigation of vertical compositional gradients in Cu(In,Ga)Se-2 by highly spatially and spectrally resolved cathodoluminescence microscopy Muller M, Ribbe S, Hempel T, Bertram F, Christen J, Witte W, Stefan PB, Powalla M Thin Solid Films, 535, 270, 2013 |
7 |
Epitaxial lateral overgrowth of non-polar GaN(1 (1)over-bar 0 0) on Si(112) patterned substrates by MOCVD Izyumskaya N, Liu SJ, Avrutin V, Ni XF, Wu M, Ozgur U, Metzner S, Bertram F, Christen J, Zhou L, Smith DJ, Morkoc H Journal of Crystal Growth, 314(1), 129, 2011 |
8 |
MOVPE of CuGaSe2 on GaAs in the presence of a CuxSe secondary phase Gutay L, Larsen JK, Guillot J, Muller M, Bertram F, Christen J, Siebentritt S Journal of Crystal Growth, 315(1), 82, 2011 |
9 |
Luminescence Properties of Photonic Crystal InGaN/GaN Light Emitting Layers on Silicon-on-Insulator Lin VKX, Tripathy S, Teo SL, Dolmanan SB, Dadgar A, Noltemeyer M, Franke A, Bertram F, Christen J, Krost A Electrochemical and Solid State Letters, 13(10), H343, 2010 |
10 |
Well width study of InGaN multiple quantum wells for blue-green emitter Hoffmann V, Netzel C, Zeimer U, Knauer A, Einfeldt S, Bertram F, Christen J, Weyers M, Trankle G, Kneissl M Journal of Crystal Growth, 312(23), 3428, 2010 |