화학공학소재연구정보센터
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No. Article
1 Compositionally graded InGaN layers grown on vicinal N-face GaN substrates by plasma-assisted molecular beam epitaxy
Hestroffer K, Lund C, Koksaldi O, Li HR, Schmidt G, Trippel M, Veit P, Bertram F, Lu N, Wang QX, Christen J, Kim MJ, Mishra UK, Keller S
Journal of Crystal Growth, 465, 55, 2017
2 Metalorganic chemical vapor phase epitaxy of narrow-band distributed Bragg reflectors realized by GaN:Ge modulation doping
Berger C, Lesnik A, Zettler T, Schmidt G, Veit P, Dadgar A, Blasing J, Christen J, Strittmatter A
Journal of Crystal Growth, 440, 6, 2016
3 Growth of AlInN/GaN distributed Bragg reflectors with improved interface quality
Berger C, Dadgar A, Blasing J, Lesnik A, Veit P, Schmidt G, Hempel T, Christen J, Krost A, Strittmatter A
Journal of Crystal Growth, 414, 105, 2015
4 Growth of InGaN/GaN core-shell structures on selectively etched GaN rods by molecular beam epitaxy
Albert S, Bengoechea-Encabo A, Sabido-Siller M, Mueller M, Schmidt G, Metzner S, Veit P, Bertram F, Sanchez-Garcia MA, Christen J, Calleja E
Journal of Crystal Growth, 392, 5, 2014
5 MOVPE growth of semi-polar GaN light-emitting diode structures on planar Si(112) and Si(113) substrates
Ravash R, Dadgar A, Bertram F, Dempewolf A, Metzner S, Hempel T, Christen J, Krost A
Journal of Crystal Growth, 370, 288, 2013
6 Investigation of vertical compositional gradients in Cu(In,Ga)Se-2 by highly spatially and spectrally resolved cathodoluminescence microscopy
Muller M, Ribbe S, Hempel T, Bertram F, Christen J, Witte W, Stefan PB, Powalla M
Thin Solid Films, 535, 270, 2013
7 Epitaxial lateral overgrowth of non-polar GaN(1 (1)over-bar 0 0) on Si(112) patterned substrates by MOCVD
Izyumskaya N, Liu SJ, Avrutin V, Ni XF, Wu M, Ozgur U, Metzner S, Bertram F, Christen J, Zhou L, Smith DJ, Morkoc H
Journal of Crystal Growth, 314(1), 129, 2011
8 MOVPE of CuGaSe2 on GaAs in the presence of a CuxSe secondary phase
Gutay L, Larsen JK, Guillot J, Muller M, Bertram F, Christen J, Siebentritt S
Journal of Crystal Growth, 315(1), 82, 2011
9 Luminescence Properties of Photonic Crystal InGaN/GaN Light Emitting Layers on Silicon-on-Insulator
Lin VKX, Tripathy S, Teo SL, Dolmanan SB, Dadgar A, Noltemeyer M, Franke A, Bertram F, Christen J, Krost A
Electrochemical and Solid State Letters, 13(10), H343, 2010
10 Well width study of InGaN multiple quantum wells for blue-green emitter
Hoffmann V, Netzel C, Zeimer U, Knauer A, Einfeldt S, Bertram F, Christen J, Weyers M, Trankle G, Kneissl M
Journal of Crystal Growth, 312(23), 3428, 2010